The physical properties of nickel doped indium oxide thin film prepared by the sol-gel method and its potential as a humidity sensor

Ni doped In2O3 (NixIn2−xO3: x=0.00, 0.02, 0.04, 0.06, 0.08 and 0.10) films have been successfully prepared by a sol-gel method. All films have nanograins, cubic structures and single phase. The Ni unsystematically affected the film thickness and surface roughness. All films showed high transmission...

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Veröffentlicht in:	Materials science in semiconductor processing 2016-10, Vol.53, p.72-78
Hauptverfasser:	Ibrahim, N.B., Arsad, A.Z., Yusop, Noratiqah, Baqiah, H.
Format:	Artikel
Sprache:	eng
Schlagworte:	Film thickness Humidity Indium oxides Magnet Nickel Physical properties Semiconductors Sensor Sensors Sol gel process Spin coating Thin films
Online-Zugang:	Volltext
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