Incorporation of black phosphorus into poly(3-hexylthiophene)/n-type Si devices resulting improvement in rectifying and optoelectronic performances
•Black phosphorus (BP) is a p-type two-dimensional material.•BP is incorporated into the poly(3-hexylthiophene) (P3HT) films.•BP doping leads to a significant increase in the carrier mobility of P3HT.•The interfacial modification of P3HT/n-type Si is found by doping with BP.•BP doping results improv...
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| Veröffentlicht in: | Synthetic metals 2016-10, Vol.220, p.538-542 |
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| creator | Lin, Hong-Zhi Lin, Yow-Jon |
| description | •Black phosphorus (BP) is a p-type two-dimensional material.•BP is incorporated into the poly(3-hexylthiophene) (P3HT) films.•BP doping leads to a significant increase in the carrier mobility of P3HT.•The interfacial modification of P3HT/n-type Si is found by doping with BP.•BP doping results improvement in the rectifying performances for P3HT/Si devices.
The effect of the incorporation of black phosphorus (BP) into poly(3-hexylthiophene) (P3HT) on the electrical conduction mechanisms in the rectifying current-voltage characteristics of P3HT/n-type Si devices was investigated. It is shown that the rectifying behavior is affected by the bulk effects of the P3HT layer and the forward-voltage current is limited by thermionic emission and space charge limited current mechanisms. The incorporation of BP into P3HT leads to a combined effect of a significant increase in the hole mobility and the interfacial modification of P3HT/n-type Si, resulting improvement in the rectifying and optoelectronic performances of P3HT/n-type Si devices. |
| doi_str_mv | 10.1016/j.synthmet.2016.07.029 |
| format | Article |
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The effect of the incorporation of black phosphorus (BP) into poly(3-hexylthiophene) (P3HT) on the electrical conduction mechanisms in the rectifying current-voltage characteristics of P3HT/n-type Si devices was investigated. It is shown that the rectifying behavior is affected by the bulk effects of the P3HT layer and the forward-voltage current is limited by thermionic emission and space charge limited current mechanisms. The incorporation of BP into P3HT leads to a combined effect of a significant increase in the hole mobility and the interfacial modification of P3HT/n-type Si, resulting improvement in the rectifying and optoelectronic performances of P3HT/n-type Si devices.</description><identifier>ISSN: 0379-6779</identifier><identifier>EISSN: 1879-3290</identifier><identifier>DOI: 10.1016/j.synthmet.2016.07.029</identifier><language>eng</language><publisher>Elsevier B.V</publisher><subject>Devices ; Electrical conduction ; Electrical properties ; Heterojunction ; Hole mobility ; Optoelectronic devices ; Phosphorus ; Polymer ; Space charge ; Synthetic metals ; Thermionic emission ; Thin film ; Two-dimensional materials</subject><ispartof>Synthetic metals, 2016-10, Vol.220, p.538-542</ispartof><rights>2016 Elsevier B.V.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c345t-6819c2fdf1a2668fc931a47712d554fade8cdb1c9af3a2cf522a7ff73795c7213</citedby><cites>FETCH-LOGICAL-c345t-6819c2fdf1a2668fc931a47712d554fade8cdb1c9af3a2cf522a7ff73795c7213</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0379677916302612$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,776,780,3537,27901,27902,65306</link.rule.ids></links><search><creatorcontrib>Lin, Hong-Zhi</creatorcontrib><creatorcontrib>Lin, Yow-Jon</creatorcontrib><title>Incorporation of black phosphorus into poly(3-hexylthiophene)/n-type Si devices resulting improvement in rectifying and optoelectronic performances</title><title>Synthetic metals</title><description>•Black phosphorus (BP) is a p-type two-dimensional material.•BP is incorporated into the poly(3-hexylthiophene) (P3HT) films.•BP doping leads to a significant increase in the carrier mobility of P3HT.•The interfacial modification of P3HT/n-type Si is found by doping with BP.•BP doping results improvement in the rectifying performances for P3HT/Si devices.
The effect of the incorporation of black phosphorus (BP) into poly(3-hexylthiophene) (P3HT) on the electrical conduction mechanisms in the rectifying current-voltage characteristics of P3HT/n-type Si devices was investigated. It is shown that the rectifying behavior is affected by the bulk effects of the P3HT layer and the forward-voltage current is limited by thermionic emission and space charge limited current mechanisms. The incorporation of BP into P3HT leads to a combined effect of a significant increase in the hole mobility and the interfacial modification of P3HT/n-type Si, resulting improvement in the rectifying and optoelectronic performances of P3HT/n-type Si devices.</description><subject>Devices</subject><subject>Electrical conduction</subject><subject>Electrical properties</subject><subject>Heterojunction</subject><subject>Hole mobility</subject><subject>Optoelectronic devices</subject><subject>Phosphorus</subject><subject>Polymer</subject><subject>Space charge</subject><subject>Synthetic metals</subject><subject>Thermionic emission</subject><subject>Thin film</subject><subject>Two-dimensional materials</subject><issn>0379-6779</issn><issn>1879-3290</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNqFUctO3DAUtRCVGGh_ofKSLhL8mMTJjgrxkpBY0K4t41wTD4ltbM-o-Y7-MB4NrFlc3ec5uvcehH5SUlNC24tNnRaXxxlyzUpeE1ET1h-hFe1EX3HWk2O0IrzErRD9CTpNaUMIoT1rVuj_vdM-Bh9Vtt5hb_DzpPQrDqNPxeI2Yeuyx8FPyzmvRvi3THm0Pozg4NeFq_ISAD9ZPMDOakg4QtpO2boXbOcQ_Q5mcLlwlIbO1iz7jnID9iF7mEotemc1DhCNj7NyheM7-mbUlODHhz9Df2-u_1zdVQ-Pt_dXvx8qzddNrtqO9pqZwVDF2rYzuudUrYWgbGiatVEDdHp4prpXhiumTcOYEsaI8olGC0b5GTo_8JY937aQspxt0jBNyoHfJkk73rRrxpkoo-1hVEefUgQjQ7SzioukRO5VkBv5qYLcqyCJkEWFArw8AKEcsrMQZdIWypWD3T9EDt5-RfEOpraZ5g</recordid><startdate>201610</startdate><enddate>201610</enddate><creator>Lin, Hong-Zhi</creator><creator>Lin, Yow-Jon</creator><general>Elsevier B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>201610</creationdate><title>Incorporation of black phosphorus into poly(3-hexylthiophene)/n-type Si devices resulting improvement in rectifying and optoelectronic performances</title><author>Lin, Hong-Zhi ; Lin, Yow-Jon</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c345t-6819c2fdf1a2668fc931a47712d554fade8cdb1c9af3a2cf522a7ff73795c7213</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>Devices</topic><topic>Electrical conduction</topic><topic>Electrical properties</topic><topic>Heterojunction</topic><topic>Hole mobility</topic><topic>Optoelectronic devices</topic><topic>Phosphorus</topic><topic>Polymer</topic><topic>Space charge</topic><topic>Synthetic metals</topic><topic>Thermionic emission</topic><topic>Thin film</topic><topic>Two-dimensional materials</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lin, Hong-Zhi</creatorcontrib><creatorcontrib>Lin, Yow-Jon</creatorcontrib><collection>CrossRef</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Synthetic metals</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lin, Hong-Zhi</au><au>Lin, Yow-Jon</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Incorporation of black phosphorus into poly(3-hexylthiophene)/n-type Si devices resulting improvement in rectifying and optoelectronic performances</atitle><jtitle>Synthetic metals</jtitle><date>2016-10</date><risdate>2016</risdate><volume>220</volume><spage>538</spage><epage>542</epage><pages>538-542</pages><issn>0379-6779</issn><eissn>1879-3290</eissn><abstract>•Black phosphorus (BP) is a p-type two-dimensional material.•BP is incorporated into the poly(3-hexylthiophene) (P3HT) films.•BP doping leads to a significant increase in the carrier mobility of P3HT.•The interfacial modification of P3HT/n-type Si is found by doping with BP.•BP doping results improvement in the rectifying performances for P3HT/Si devices.
The effect of the incorporation of black phosphorus (BP) into poly(3-hexylthiophene) (P3HT) on the electrical conduction mechanisms in the rectifying current-voltage characteristics of P3HT/n-type Si devices was investigated. It is shown that the rectifying behavior is affected by the bulk effects of the P3HT layer and the forward-voltage current is limited by thermionic emission and space charge limited current mechanisms. The incorporation of BP into P3HT leads to a combined effect of a significant increase in the hole mobility and the interfacial modification of P3HT/n-type Si, resulting improvement in the rectifying and optoelectronic performances of P3HT/n-type Si devices.</abstract><pub>Elsevier B.V</pub><doi>10.1016/j.synthmet.2016.07.029</doi><tpages>5</tpages></addata></record> |
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| source | Elsevier ScienceDirect Journals |
| subjects | Devices Electrical conduction Electrical properties Heterojunction Hole mobility Optoelectronic devices Phosphorus Polymer Space charge Synthetic metals Thermionic emission Thin film Two-dimensional materials |
| title | Incorporation of black phosphorus into poly(3-hexylthiophene)/n-type Si devices resulting improvement in rectifying and optoelectronic performances |
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