Four-junction heterovalent solar cells based on II-VI/III-V/Ge coherent and metamorphic heterostructures

We present original design and performance simulations of four‐junction heterovalent concentrator solar cells with monolithically integrated junctions based on Ge, III–V, and II–VI semiconductors. The developed design relies on the formation of a metamorphic buffer layer matching lattice constants o...

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Veröffentlicht in:	Physica Status Solidi. B: Basic Solid State Physics 2016-08, Vol.253 (8), p.1503-1506
Hauptverfasser:	Toropov, A. A., Evropeytsev, E. A., Sorokin, S. V., Klimko, G. V., Gronin, S. V., Sedova, I. V., Kalinovskii, V. S., Kontrosh, E. V., Usikova, A. A., Il'inskaya, N. D., Ivanov, S. V.
Format:	Artikel
Sprache:	eng
Schlagworte:	Cadmium selenides concentrator solar cells germanium Heterostructures II-VI semiconductors III-V semiconductors Metamorphic molecular beam epitaxy Photovoltaic cells Semiconductors Solar cells Superlattices Zinc selenides
Online-Zugang:	Volltext
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