Four-junction heterovalent solar cells based on II-VI/III-V/Ge coherent and metamorphic heterostructures
We present original design and performance simulations of four‐junction heterovalent concentrator solar cells with monolithically integrated junctions based on Ge, III–V, and II–VI semiconductors. The developed design relies on the formation of a metamorphic buffer layer matching lattice constants o...
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| Veröffentlicht in: | Physica Status Solidi. B: Basic Solid State Physics 2016-08, Vol.253 (8), p.1503-1506 |
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| container_title | Physica Status Solidi. B: Basic Solid State Physics |
| container_volume | 253 |
| creator | Toropov, A. A. Evropeytsev, E. A. Sorokin, S. V. Klimko, G. V. Gronin, S. V. Sedova, I. V. Kalinovskii, V. S. Kontrosh, E. V. Usikova, A. A. Il'inskaya, N. D. Ivanov, S. V. |
| description | We present original design and performance simulations of four‐junction heterovalent concentrator solar cells with monolithically integrated junctions based on Ge, III–V, and II–VI semiconductors. The developed design relies on the formation of a metamorphic buffer layer matching lattice constants of a Ge junction and three more junctions based on InGaAs, AlInGaAs, and a ZnSe/CdSe short‐period superlattice. Utilizing of an n+‐type chlorine‐doped layer of ZnCdMgSe as a highly transparent conductive window is proposed. Experimental results are reported, demonstrating the potential of molecular beam epitaxy to fabricate such solar cell heterostructures atop of a Ge p–n junction formed in a Ge substrate. |
| doi_str_mv | 10.1002/pssb.201600064 |
| format | Article |
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A. ; Evropeytsev, E. A. ; Sorokin, S. V. ; Klimko, G. V. ; Gronin, S. V. ; Sedova, I. V. ; Kalinovskii, V. S. ; Kontrosh, E. V. ; Usikova, A. A. ; Il'inskaya, N. D. ; Ivanov, S. V.</creator><creatorcontrib>Toropov, A. A. ; Evropeytsev, E. A. ; Sorokin, S. V. ; Klimko, G. V. ; Gronin, S. V. ; Sedova, I. V. ; Kalinovskii, V. S. ; Kontrosh, E. V. ; Usikova, A. A. ; Il'inskaya, N. D. ; Ivanov, S. V.</creatorcontrib><description>We present original design and performance simulations of four‐junction heterovalent concentrator solar cells with monolithically integrated junctions based on Ge, III–V, and II–VI semiconductors. The developed design relies on the formation of a metamorphic buffer layer matching lattice constants of a Ge junction and three more junctions based on InGaAs, AlInGaAs, and a ZnSe/CdSe short‐period superlattice. Utilizing of an n+‐type chlorine‐doped layer of ZnCdMgSe as a highly transparent conductive window is proposed. Experimental results are reported, demonstrating the potential of molecular beam epitaxy to fabricate such solar cell heterostructures atop of a Ge p–n junction formed in a Ge substrate.</description><identifier>ISSN: 0370-1972</identifier><identifier>EISSN: 1521-3951</identifier><identifier>DOI: 10.1002/pssb.201600064</identifier><language>eng</language><publisher>Blackwell Publishing Ltd</publisher><subject>Cadmium selenides ; concentrator solar cells ; germanium ; Heterostructures ; II-VI semiconductors ; III-V semiconductors ; Metamorphic ; molecular beam epitaxy ; Photovoltaic cells ; Semiconductors ; Solar cells ; Superlattices ; Zinc selenides</subject><ispartof>Physica Status Solidi. B: Basic Solid State Physics, 2016-08, Vol.253 (8), p.1503-1506</ispartof><rights>2016 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c3494-8ccfa6fe9d6f164d2da2d73fe0957f0f190887ca0b06ee19caff9723e8493c5e3</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fpssb.201600064$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fpssb.201600064$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,776,780,1411,27901,27902,45550,45551</link.rule.ids></links><search><creatorcontrib>Toropov, A. A.</creatorcontrib><creatorcontrib>Evropeytsev, E. A.</creatorcontrib><creatorcontrib>Sorokin, S. V.</creatorcontrib><creatorcontrib>Klimko, G. V.</creatorcontrib><creatorcontrib>Gronin, S. V.</creatorcontrib><creatorcontrib>Sedova, I. V.</creatorcontrib><creatorcontrib>Kalinovskii, V. S.</creatorcontrib><creatorcontrib>Kontrosh, E. V.</creatorcontrib><creatorcontrib>Usikova, A. A.</creatorcontrib><creatorcontrib>Il'inskaya, N. D.</creatorcontrib><creatorcontrib>Ivanov, S. V.</creatorcontrib><title>Four-junction heterovalent solar cells based on II-VI/III-V/Ge coherent and metamorphic heterostructures</title><title>Physica Status Solidi. B: Basic Solid State Physics</title><addtitle>Phys. Status Solidi B</addtitle><description>We present original design and performance simulations of four‐junction heterovalent concentrator solar cells with monolithically integrated junctions based on Ge, III–V, and II–VI semiconductors. The developed design relies on the formation of a metamorphic buffer layer matching lattice constants of a Ge junction and three more junctions based on InGaAs, AlInGaAs, and a ZnSe/CdSe short‐period superlattice. Utilizing of an n+‐type chlorine‐doped layer of ZnCdMgSe as a highly transparent conductive window is proposed. Experimental results are reported, demonstrating the potential of molecular beam epitaxy to fabricate such solar cell heterostructures atop of a Ge p–n junction formed in a Ge substrate.</description><subject>Cadmium selenides</subject><subject>concentrator solar cells</subject><subject>germanium</subject><subject>Heterostructures</subject><subject>II-VI semiconductors</subject><subject>III-V semiconductors</subject><subject>Metamorphic</subject><subject>molecular beam epitaxy</subject><subject>Photovoltaic cells</subject><subject>Semiconductors</subject><subject>Solar cells</subject><subject>Superlattices</subject><subject>Zinc selenides</subject><issn>0370-1972</issn><issn>1521-3951</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNo9kD1PwzAYhC0EEuVjZc7IEvo6Tux4BARtAAFSC4yW67xWU_KFnQD99yQq6nQ66bmT7gi5oHBFAaJp6_3qKgLKAYDHB2RCk4iGTCb0kEyACQipFNExOfF-MyCCMjoh6_umd-Gmr01XNHWwxg5d861LrLvAN6V2gcGy9MFKe8yDgciy8D2bZqNMZxiYZo1uhHWdBxV2umpcuy7Mf5PvXG-63qE_I0dWlx7P__WUvN3fLW_n4dPLLLu9fgoNi2UcpsZYzS3KnFvK4zzKdZQLZhFkIixYKiFNhdGwAo5IpdHWDqsYprFkJkF2Si53va1rvnr0naoKP27QNTa9VzRlCY8kiGRA5Q79KUrcqtYVlXZbRUGNf6rxT7X_U70uFjd7N2TDXbbwHf7us9p9Ki6YSNTH80w9wjKZP_BUUfYHyHh8ew</recordid><startdate>201608</startdate><enddate>201608</enddate><creator>Toropov, A. A.</creator><creator>Evropeytsev, E. A.</creator><creator>Sorokin, S. V.</creator><creator>Klimko, G. V.</creator><creator>Gronin, S. V.</creator><creator>Sedova, I. V.</creator><creator>Kalinovskii, V. S.</creator><creator>Kontrosh, E. V.</creator><creator>Usikova, A. A.</creator><creator>Il'inskaya, N. D.</creator><creator>Ivanov, S. V.</creator><general>Blackwell Publishing Ltd</general><scope>BSCLL</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>201608</creationdate><title>Four-junction heterovalent solar cells based on II-VI/III-V/Ge coherent and metamorphic heterostructures</title><author>Toropov, A. A. ; Evropeytsev, E. A. ; Sorokin, S. V. ; Klimko, G. V. ; Gronin, S. V. ; Sedova, I. V. ; Kalinovskii, V. S. ; Kontrosh, E. V. ; Usikova, A. A. ; Il'inskaya, N. D. ; Ivanov, S. 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V.</creatorcontrib><creatorcontrib>Sedova, I. V.</creatorcontrib><creatorcontrib>Kalinovskii, V. S.</creatorcontrib><creatorcontrib>Kontrosh, E. V.</creatorcontrib><creatorcontrib>Usikova, A. A.</creatorcontrib><creatorcontrib>Il'inskaya, N. D.</creatorcontrib><creatorcontrib>Ivanov, S. V.</creatorcontrib><collection>Istex</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Physica Status Solidi. B: Basic Solid State Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Toropov, A. A.</au><au>Evropeytsev, E. A.</au><au>Sorokin, S. V.</au><au>Klimko, G. V.</au><au>Gronin, S. V.</au><au>Sedova, I. V.</au><au>Kalinovskii, V. S.</au><au>Kontrosh, E. V.</au><au>Usikova, A. A.</au><au>Il'inskaya, N. D.</au><au>Ivanov, S. V.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Four-junction heterovalent solar cells based on II-VI/III-V/Ge coherent and metamorphic heterostructures</atitle><jtitle>Physica Status Solidi. B: Basic Solid State Physics</jtitle><addtitle>Phys. Status Solidi B</addtitle><date>2016-08</date><risdate>2016</risdate><volume>253</volume><issue>8</issue><spage>1503</spage><epage>1506</epage><pages>1503-1506</pages><issn>0370-1972</issn><eissn>1521-3951</eissn><abstract>We present original design and performance simulations of four‐junction heterovalent concentrator solar cells with monolithically integrated junctions based on Ge, III–V, and II–VI semiconductors. The developed design relies on the formation of a metamorphic buffer layer matching lattice constants of a Ge junction and three more junctions based on InGaAs, AlInGaAs, and a ZnSe/CdSe short‐period superlattice. Utilizing of an n+‐type chlorine‐doped layer of ZnCdMgSe as a highly transparent conductive window is proposed. Experimental results are reported, demonstrating the potential of molecular beam epitaxy to fabricate such solar cell heterostructures atop of a Ge p–n junction formed in a Ge substrate.</abstract><pub>Blackwell Publishing Ltd</pub><doi>10.1002/pssb.201600064</doi><tpages>4</tpages></addata></record> |
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| source | Wiley Online Library Journals Frontfile Complete |
| subjects | Cadmium selenides concentrator solar cells germanium Heterostructures II-VI semiconductors III-V semiconductors Metamorphic molecular beam epitaxy Photovoltaic cells Semiconductors Solar cells Superlattices Zinc selenides |
| title | Four-junction heterovalent solar cells based on II-VI/III-V/Ge coherent and metamorphic heterostructures |
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