Electron-Beam Induced Shrinkage Effects on Line-Space Patterns of ZEP Resist

ZEP resist patterns, which have been widely used in nanofabrication in research laboratories, are shrunk during an SEM observation. This shrinkage effect makes it challenging to accurately determine their original sizes. In this work, the shrinkage effect of electron beams on ZEP resist line-space p...

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Veröffentlicht in:	Journal of Photopolymer Science and Technology 2016/06/21, Vol.29(1), pp.81-89
Hauptverfasser:	Dinh, Cong Que, Oshima, Akihiro, Nishijima, Shigehiro, Tagawa, Seiichi
Format:	Artikel
Sprache:	eng
Schlagworte:	AFM Crosslinking EB lithography Exposure Laboratories Nanostructure Photopolymers Resists Saturation SEM Shrinkage ZEP
Online-Zugang:	Volltext
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