High-performance visible blind ultraviolet photodetector based on KTaO sub(3) single crystal

We report a visible-blind ultraviolet photoconductive detector with interdigitated electrodes based on KTaO sub(3)(KTO) single crystals. Both the steady spectral responses and the transient photovoltaic measurements clearly exhibit a cutoff wavelength at 344 nm (~3.6eV), in accordance with the bandg...

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Veröffentlicht in:	Applied optics (2004) 2016-03, Vol.55 (9), p.2259-2262
Hauptverfasser:	Yang, Jing-ting, Ge, Chen, Jin, Kui-juan, Lu, Hui-bin, Yang, Guo-zhen
Format:	Artikel
Sprache:	eng
Schlagworte:	Blinds Electrodes Photodetectors Photoelectricity Single crystals Spectra Ultraviolet Wavelengths
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container_title	Applied optics (2004)
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creator	Yang, Jing-ting Ge, Chen Jin, Kui-juan Lu, Hui-bin Yang, Guo-zhen
description	We report a visible-blind ultraviolet photoconductive detector with interdigitated electrodes based on KTaO sub(3)(KTO) single crystals. Both the steady spectral responses and the transient photovoltaic measurements clearly exhibit a cutoff wavelength at 344 nm (~3.6eV), in accordance with the bandgap of KTO. The KTO photodetectors show a low dark current ~1.5pA at 20 V, and a high UV-to-visible rejection ratio with 3 orders of magnitude at room temperature. The quantum efficiency is 37.49% under 20 V bias, and the detectivity D* of 3.85x10 super(12)cm[middot]Hz super(0.5)/W, which is comparable to that of silicon photodetectors in the UV region. The rise time of photoelectric response is ~260ps, indicating an ultrafast photoelectric response characteristic. The present work offers appealing prospects for the application of KTO materials in high-performance visible blind ultraviolet photodetectors.
doi_str_mv	10.1364/AO.55.002259
format	Article
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Both the steady spectral responses and the transient photovoltaic measurements clearly exhibit a cutoff wavelength at 344 nm (~3.6eV), in accordance with the bandgap of KTO. The KTO photodetectors show a low dark current ~1.5pA at 20 V, and a high UV-to-visible rejection ratio with 3 orders of magnitude at room temperature. The quantum efficiency is 37.49% under 20 V bias, and the detectivity D* of 3.85x10 super(12)cm[middot]Hz super(0.5)/W, which is comparable to that of silicon photodetectors in the UV region. The rise time of photoelectric response is ~260ps, indicating an ultrafast photoelectric response characteristic. 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subjects	Blinds Electrodes Photodetectors Photoelectricity Single crystals Spectra Ultraviolet Wavelengths
title	High-performance visible blind ultraviolet photodetector based on KTaO sub(3) single crystal
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