Heterojunction solar cells with 23% efficiency on n-type epitaxial kerfless silicon wafers

We present a heterojunction (HJ) solar cell on n‐type epitaxially grown kerfless crystalline‐silicon with an in‐house‐measured conversion efficiency of 23%. The total cell area is 243.4 cm2. The cell has a short‐circuit current density of 39.6 mA cm−2, an open‐circuit voltage of 725 mV, and a fill f...

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Veröffentlicht in:	Progress in photovoltaics 2016-10, Vol.24 (10), p.1295-1303
Hauptverfasser:	Kobayashi, Eiji, Watabe, Yoshimi, Hao, Ruiying, Ravi, T. S.
Format:	Artikel
Sprache:	eng
Schlagworte:	Current density Epitaxial growth epitaxy heterojunction Heterojunctions high efficiency Mapping Photovoltaic cells Silicon solar cell Solar cells thin film Wafers
Online-Zugang:	Volltext
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