Microstrip antenna–generator based on gallium arsenide

A design of the microstrip antenna with an epitaxial structure used as a dielectric substrate is developed. The epitaxial structure contains a thin layer of n -type gallium arsenide of on a GaAs semi-insulating substrate. The layer thickness is selected with consideration for the carrier depletion r...

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Veröffentlicht in:	Journal of communications technology & electronics 2016-08, Vol.61 (8), p.949-951
Hauptverfasser:	Lyubchenko, V. E., Bryantseva, T. A., Markov, I. A., Radchenko, D. E., Yunevich, E. O.
Format:	Artikel
Sprache:	eng
Schlagworte:	Analysis Antennas Antennas (Electronics) Arsenic Arsenic compounds Communications Engineering Communications equipment Communications technology Dielectric materials Diodes Electronics Engineering Epitaxy Field effect transistors Gallium arsenide Networks On the 60th Anniversary of the Journal of Communications Technology and Electronics Radiation Semiconductors Sensors Studies Substrates Thin films Transistors
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