New Approach for ArFi Extension by Dry Development Rinse Process
ArF lithography is still major process to develop N7/N5 devices. Especially in resist materials, DOF, roughness and CD uniformity are the biggest key parameters in fine pitches. To improve these issues, we newly propose to apply Dry Development Rinse Process (DDRP) & Materials (DDRM) as the ArF...
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| Veröffentlicht in: | Journal of Photopolymer Science and Technology 2016/06/21, Vol.29(1), pp.69-74 |
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| container_title | Journal of Photopolymer Science and Technology |
| container_volume | 29 |
| creator | Shibayama, Wataru Shigaki, Shuhei Takeda, Satoshi Onishi, Ryuji Nakajima, Makoto Sakamoto, Rikimaru |
| description | ArF lithography is still major process to develop N7/N5 devices. Especially in resist materials, DOF, roughness and CD uniformity are the biggest key parameters in fine pitches. To improve these issues, we newly propose to apply Dry Development Rinse Process (DDRP) & Materials (DDRM) as the ArF extension approach. In EUV lithography, DDRP is already one of the approaches to achieve high resolution. However, the performance of DDRP for ArF lithography was never demonstrated in detail. In this paper, we especially focus to improve DOF, CD uniformity and roughness by applying DDRP for ArF generation. Finally we succeeded to enhance every parameter at the same time by controlling DDRM etching condition. This new DDRP technology can be the promising approach for ArF extension stages in N7/N5 and beyond. |
| doi_str_mv | 10.2494/photopolymer.29.69 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1835608669</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>4139316741</sourcerecordid><originalsourceid>FETCH-LOGICAL-c601t-136aed6089f80919bd4f31818ff9f937a3509c848c02eedb6026f2209fd5f8023</originalsourceid><addsrcrecordid>eNplkM9LwzAYhoMoOKf_gKeCFy-d-dXY3BxzU2GoiJ5Dln5xHW1Tk07df29mZYgewnfI87y8vAidEjyiXPKLduk617pqU4MfUTkScg8NCOMyFYyJfTTAkvBUUs4P0VEIK4wZyzI5QFf38JGM29Y7bZaJdT4Z-1mZTD87aELpmmSxSa59fPAOlWtraLrkqWwCJI_eGQjhGB1YXQU4-blD9DKbPk9u0_nDzd1kPE-NwKRLCRMaCoFzafPYRS4KbhnJSW6ttJJdapZhaXKeG0wBioXAVFhKsbRFFg3Khui8z41V39YQOlWXwUBV6QbcOiiSsyzGCyEjevYHXbm1b2K7SG2HoBkmkaI9ZbwLwYNVrS9r7TeKYLUdVf0eVVGpvqOnvbQKnX6FnaJ9V5oK_imk93b_Zqm9goZ9AXzphuc</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1809142501</pqid></control><display><type>article</type><title>New Approach for ArFi Extension by Dry Development Rinse Process</title><source>J-STAGE (Japan Science & Technology Information Aggregator, Electronic) Freely Available Titles - Japanese</source><source>Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals</source><source>Free Full-Text Journals in Chemistry</source><creator>Shibayama, Wataru ; Shigaki, Shuhei ; Takeda, Satoshi ; Onishi, Ryuji ; Nakajima, Makoto ; Sakamoto, Rikimaru</creator><creatorcontrib>Shibayama, Wataru ; Shigaki, Shuhei ; Takeda, Satoshi ; Onishi, Ryuji ; Nakajima, Makoto ; Sakamoto, Rikimaru</creatorcontrib><description>ArF lithography is still major process to develop N7/N5 devices. Especially in resist materials, DOF, roughness and CD uniformity are the biggest key parameters in fine pitches. To improve these issues, we newly propose to apply Dry Development Rinse Process (DDRP) & Materials (DDRM) as the ArF extension approach. In EUV lithography, DDRP is already one of the approaches to achieve high resolution. However, the performance of DDRP for ArF lithography was never demonstrated in detail. In this paper, we especially focus to improve DOF, CD uniformity and roughness by applying DDRP for ArF generation. Finally we succeeded to enhance every parameter at the same time by controlling DDRM etching condition. This new DDRP technology can be the promising approach for ArF extension stages in N7/N5 and beyond.</description><identifier>ISSN: 0914-9244</identifier><identifier>EISSN: 1349-6336</identifier><identifier>DOI: 10.2494/photopolymer.29.69</identifier><language>eng</language><publisher>Hiratsuka: The Society of Photopolymer Science and Technology(SPST)</publisher><subject>ArF extension ; DDRM ; DDRP ; Devices ; Drying ; Etching ; LCDU ; Lithography ; LWR ; Parameters ; pattern collapse ; photo resist ; Photopolymers ; Process Window ; Roughness ; Variability</subject><ispartof>Journal of Photopolymer Science and Technology, 2016/06/21, Vol.29(1), pp.69-74</ispartof><rights>2016 The Society of Photopolymer Science and Technology (SPST)</rights><rights>Copyright Japan Science and Technology Agency 2016</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c601t-136aed6089f80919bd4f31818ff9f937a3509c848c02eedb6026f2209fd5f8023</citedby><cites>FETCH-LOGICAL-c601t-136aed6089f80919bd4f31818ff9f937a3509c848c02eedb6026f2209fd5f8023</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,1877,27901,27902</link.rule.ids></links><search><creatorcontrib>Shibayama, Wataru</creatorcontrib><creatorcontrib>Shigaki, Shuhei</creatorcontrib><creatorcontrib>Takeda, Satoshi</creatorcontrib><creatorcontrib>Onishi, Ryuji</creatorcontrib><creatorcontrib>Nakajima, Makoto</creatorcontrib><creatorcontrib>Sakamoto, Rikimaru</creatorcontrib><title>New Approach for ArFi Extension by Dry Development Rinse Process</title><title>Journal of Photopolymer Science and Technology</title><addtitle>J. Photopol. Sci. Technol.</addtitle><description>ArF lithography is still major process to develop N7/N5 devices. Especially in resist materials, DOF, roughness and CD uniformity are the biggest key parameters in fine pitches. To improve these issues, we newly propose to apply Dry Development Rinse Process (DDRP) & Materials (DDRM) as the ArF extension approach. In EUV lithography, DDRP is already one of the approaches to achieve high resolution. However, the performance of DDRP for ArF lithography was never demonstrated in detail. In this paper, we especially focus to improve DOF, CD uniformity and roughness by applying DDRP for ArF generation. Finally we succeeded to enhance every parameter at the same time by controlling DDRM etching condition. This new DDRP technology can be the promising approach for ArF extension stages in N7/N5 and beyond.</description><subject>ArF extension</subject><subject>DDRM</subject><subject>DDRP</subject><subject>Devices</subject><subject>Drying</subject><subject>Etching</subject><subject>LCDU</subject><subject>Lithography</subject><subject>LWR</subject><subject>Parameters</subject><subject>pattern collapse</subject><subject>photo resist</subject><subject>Photopolymers</subject><subject>Process Window</subject><subject>Roughness</subject><subject>Variability</subject><issn>0914-9244</issn><issn>1349-6336</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNplkM9LwzAYhoMoOKf_gKeCFy-d-dXY3BxzU2GoiJ5Dln5xHW1Tk07df29mZYgewnfI87y8vAidEjyiXPKLduk617pqU4MfUTkScg8NCOMyFYyJfTTAkvBUUs4P0VEIK4wZyzI5QFf38JGM29Y7bZaJdT4Z-1mZTD87aELpmmSxSa59fPAOlWtraLrkqWwCJI_eGQjhGB1YXQU4-blD9DKbPk9u0_nDzd1kPE-NwKRLCRMaCoFzafPYRS4KbhnJSW6ttJJdapZhaXKeG0wBioXAVFhKsbRFFg3Khui8z41V39YQOlWXwUBV6QbcOiiSsyzGCyEjevYHXbm1b2K7SG2HoBkmkaI9ZbwLwYNVrS9r7TeKYLUdVf0eVVGpvqOnvbQKnX6FnaJ9V5oK_imk93b_Zqm9goZ9AXzphuc</recordid><startdate>20160101</startdate><enddate>20160101</enddate><creator>Shibayama, Wataru</creator><creator>Shigaki, Shuhei</creator><creator>Takeda, Satoshi</creator><creator>Onishi, Ryuji</creator><creator>Nakajima, Makoto</creator><creator>Sakamoto, Rikimaru</creator><general>The Society of Photopolymer Science and Technology(SPST)</general><general>Japan Science and Technology Agency</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>7U5</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20160101</creationdate><title>New Approach for ArFi Extension by Dry Development Rinse Process</title><author>Shibayama, Wataru ; Shigaki, Shuhei ; Takeda, Satoshi ; Onishi, Ryuji ; Nakajima, Makoto ; Sakamoto, Rikimaru</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c601t-136aed6089f80919bd4f31818ff9f937a3509c848c02eedb6026f2209fd5f8023</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>ArF extension</topic><topic>DDRM</topic><topic>DDRP</topic><topic>Devices</topic><topic>Drying</topic><topic>Etching</topic><topic>LCDU</topic><topic>Lithography</topic><topic>LWR</topic><topic>Parameters</topic><topic>pattern collapse</topic><topic>photo resist</topic><topic>Photopolymers</topic><topic>Process Window</topic><topic>Roughness</topic><topic>Variability</topic><toplevel>online_resources</toplevel><creatorcontrib>Shibayama, Wataru</creatorcontrib><creatorcontrib>Shigaki, Shuhei</creatorcontrib><creatorcontrib>Takeda, Satoshi</creatorcontrib><creatorcontrib>Onishi, Ryuji</creatorcontrib><creatorcontrib>Nakajima, Makoto</creatorcontrib><creatorcontrib>Sakamoto, Rikimaru</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of Photopolymer Science and Technology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Shibayama, Wataru</au><au>Shigaki, Shuhei</au><au>Takeda, Satoshi</au><au>Onishi, Ryuji</au><au>Nakajima, Makoto</au><au>Sakamoto, Rikimaru</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>New Approach for ArFi Extension by Dry Development Rinse Process</atitle><jtitle>Journal of Photopolymer Science and Technology</jtitle><addtitle>J. Photopol. Sci. Technol.</addtitle><date>2016-01-01</date><risdate>2016</risdate><volume>29</volume><issue>1</issue><spage>69</spage><epage>74</epage><pages>69-74</pages><issn>0914-9244</issn><eissn>1349-6336</eissn><abstract>ArF lithography is still major process to develop N7/N5 devices. Especially in resist materials, DOF, roughness and CD uniformity are the biggest key parameters in fine pitches. To improve these issues, we newly propose to apply Dry Development Rinse Process (DDRP) & Materials (DDRM) as the ArF extension approach. In EUV lithography, DDRP is already one of the approaches to achieve high resolution. However, the performance of DDRP for ArF lithography was never demonstrated in detail. In this paper, we especially focus to improve DOF, CD uniformity and roughness by applying DDRP for ArF generation. Finally we succeeded to enhance every parameter at the same time by controlling DDRM etching condition. This new DDRP technology can be the promising approach for ArF extension stages in N7/N5 and beyond.</abstract><cop>Hiratsuka</cop><pub>The Society of Photopolymer Science and Technology(SPST)</pub><doi>10.2494/photopolymer.29.69</doi><tpages>6</tpages><oa>free_for_read</oa></addata></record> |
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| source | J-STAGE (Japan Science & Technology Information Aggregator, Electronic) Freely Available Titles - Japanese; Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals; Free Full-Text Journals in Chemistry |
| subjects | ArF extension DDRM DDRP Devices Drying Etching LCDU Lithography LWR Parameters pattern collapse photo resist Photopolymers Process Window Roughness Variability |
| title | New Approach for ArFi Extension by Dry Development Rinse Process |
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