CMOS Integrated Time-Mode Temperature Sensor for Self-Refresh Control in DRAM Memory Cell
This paper proposes a low-power complementary metal-oxide-semiconductor (CMOS) smart temperature sensor in order to obtain self-refresh control for low-power memory cells. The multiple-block system is composed of a temperature-to-pulse generator (TPG), a time-to-digital converter (TDC), and a freque...
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| Veröffentlicht in: | IEEE sensors journal 2016-09, Vol.16 (17), p.6687-6693 |
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| creator | kim, hyungwon an, sehyuk kim, namsoo |
| description | This paper proposes a low-power complementary metal-oxide-semiconductor (CMOS) smart temperature sensor in order to obtain self-refresh control for low-power memory cells. The multiple-block system is composed of a temperature-to-pulse generator (TPG), a time-to-digital converter (TDC), and a frequency selector. A pulse-shrinking system with an inverter-based delay line is used for feedback topology in the TDC. A temperature-independent current reference is applied for temperature compensation in the ring-oscillator and delay line in the TPG. The small-size time-mode temperature sensor is designed using a 0.35-μm CMOS process. Six different digital outputs are obtained for temperature ranging between -40°C and 100°C. Measurement shows that the proposed temperature sensor operates with a power dissipation of 0.075 μW per sample and a die area of 0.08 mm 2 . The output frequency is shown to increase exponentially with variations in temperature, while the shrinking pulse in the TDC shows linear dependence on temperature. |
| doi_str_mv | 10.1109/JSEN.2016.2585820 |
| format | Article |
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The multiple-block system is composed of a temperature-to-pulse generator (TPG), a time-to-digital converter (TDC), and a frequency selector. A pulse-shrinking system with an inverter-based delay line is used for feedback topology in the TDC. A temperature-independent current reference is applied for temperature compensation in the ring-oscillator and delay line in the TPG. The small-size time-mode temperature sensor is designed using a 0.35-μm CMOS process. Six different digital outputs are obtained for temperature ranging between -40°C and 100°C. Measurement shows that the proposed temperature sensor operates with a power dissipation of 0.075 μW per sample and a die area of 0.08 mm 2 . The output frequency is shown to increase exponentially with variations in temperature, while the shrinking pulse in the TDC shows linear dependence on temperature.</description><identifier>ISSN: 1530-437X</identifier><identifier>EISSN: 1558-1748</identifier><identifier>DOI: 10.1109/JSEN.2016.2585820</identifier><identifier>CODEN: ISJEAZ</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>CMOS ; CMOS integrated circuits ; Control systems ; Delay lines ; Delays ; Digital ; Inverters ; Memory (computers) ; Random access memory ; Selectors ; self-refresh ; TDC ; Temperature ; Temperature compensation ; Temperature dependence ; Temperature sensors ; time-mode</subject><ispartof>IEEE sensors journal, 2016-09, Vol.16 (17), p.6687-6693</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2016</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c326t-7b24b8f16a4b23d65f5bd1b040af100f6cb36e2a0fd7b1c846a6e15e0fb8c7e33</citedby><cites>FETCH-LOGICAL-c326t-7b24b8f16a4b23d65f5bd1b040af100f6cb36e2a0fd7b1c846a6e15e0fb8c7e33</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/7502191$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/7502191$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>kim, hyungwon</creatorcontrib><creatorcontrib>an, sehyuk</creatorcontrib><creatorcontrib>kim, namsoo</creatorcontrib><title>CMOS Integrated Time-Mode Temperature Sensor for Self-Refresh Control in DRAM Memory Cell</title><title>IEEE sensors journal</title><addtitle>JSEN</addtitle><description>This paper proposes a low-power complementary metal-oxide-semiconductor (CMOS) smart temperature sensor in order to obtain self-refresh control for low-power memory cells. The multiple-block system is composed of a temperature-to-pulse generator (TPG), a time-to-digital converter (TDC), and a frequency selector. A pulse-shrinking system with an inverter-based delay line is used for feedback topology in the TDC. A temperature-independent current reference is applied for temperature compensation in the ring-oscillator and delay line in the TPG. The small-size time-mode temperature sensor is designed using a 0.35-μm CMOS process. Six different digital outputs are obtained for temperature ranging between -40°C and 100°C. Measurement shows that the proposed temperature sensor operates with a power dissipation of 0.075 μW per sample and a die area of 0.08 mm 2 . The output frequency is shown to increase exponentially with variations in temperature, while the shrinking pulse in the TDC shows linear dependence on temperature.</description><subject>CMOS</subject><subject>CMOS integrated circuits</subject><subject>Control systems</subject><subject>Delay lines</subject><subject>Delays</subject><subject>Digital</subject><subject>Inverters</subject><subject>Memory (computers)</subject><subject>Random access memory</subject><subject>Selectors</subject><subject>self-refresh</subject><subject>TDC</subject><subject>Temperature</subject><subject>Temperature compensation</subject><subject>Temperature dependence</subject><subject>Temperature sensors</subject><subject>time-mode</subject><issn>1530-437X</issn><issn>1558-1748</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkE1Lw0AQhoMoWKs_QLwsePGSOpPNfvQosX5hFWwFPYV8zGokydbd9NB_75aKB2GGGYbnHV7eKDpFmCDC9PJhMXuaJIBykggtdAJ70QiF0DGqVO9vdw5xytXbYXTk_RcATpVQo-g9mz8v2H0_0IcrBqrZsukontua2JK6FYXj2hFbUO-tYyb0gloTv5Bx5D9ZZvvB2ZY1Pbt-uZqzOXXWbVhGbXscHZii9XTyO8fR681smd3Fj8-399nVY1zxRA6xKpO01AZlkZYJr6UwoqyxhBQKgwBGViWXlBRgalVipVNZSEJBYEpdKeJ8HF3s_q6c_V6TH_Ku8VUwUPRk1z5HzYUECBXQ83_ol127PrgLFIJQUiMGCndU5az3jky-ck1XuE2OkG_Dzrdh59uw89-wg-Zsp2mI6I9XAhKcIv8BOGJ5jw</recordid><startdate>20160901</startdate><enddate>20160901</enddate><creator>kim, hyungwon</creator><creator>an, sehyuk</creator><creator>kim, namsoo</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20160901</creationdate><title>CMOS Integrated Time-Mode Temperature Sensor for Self-Refresh Control in DRAM Memory Cell</title><author>kim, hyungwon ; an, sehyuk ; kim, namsoo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c326t-7b24b8f16a4b23d65f5bd1b040af100f6cb36e2a0fd7b1c846a6e15e0fb8c7e33</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>CMOS</topic><topic>CMOS integrated circuits</topic><topic>Control systems</topic><topic>Delay lines</topic><topic>Delays</topic><topic>Digital</topic><topic>Inverters</topic><topic>Memory (computers)</topic><topic>Random access memory</topic><topic>Selectors</topic><topic>self-refresh</topic><topic>TDC</topic><topic>Temperature</topic><topic>Temperature compensation</topic><topic>Temperature dependence</topic><topic>Temperature sensors</topic><topic>time-mode</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>kim, hyungwon</creatorcontrib><creatorcontrib>an, sehyuk</creatorcontrib><creatorcontrib>kim, namsoo</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE/IET Electronic Library</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE sensors journal</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>kim, hyungwon</au><au>an, sehyuk</au><au>kim, namsoo</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>CMOS Integrated Time-Mode Temperature Sensor for Self-Refresh Control in DRAM Memory Cell</atitle><jtitle>IEEE sensors journal</jtitle><stitle>JSEN</stitle><date>2016-09-01</date><risdate>2016</risdate><volume>16</volume><issue>17</issue><spage>6687</spage><epage>6693</epage><pages>6687-6693</pages><issn>1530-437X</issn><eissn>1558-1748</eissn><coden>ISJEAZ</coden><abstract>This paper proposes a low-power complementary metal-oxide-semiconductor (CMOS) smart temperature sensor in order to obtain self-refresh control for low-power memory cells. The multiple-block system is composed of a temperature-to-pulse generator (TPG), a time-to-digital converter (TDC), and a frequency selector. A pulse-shrinking system with an inverter-based delay line is used for feedback topology in the TDC. A temperature-independent current reference is applied for temperature compensation in the ring-oscillator and delay line in the TPG. The small-size time-mode temperature sensor is designed using a 0.35-μm CMOS process. Six different digital outputs are obtained for temperature ranging between -40°C and 100°C. Measurement shows that the proposed temperature sensor operates with a power dissipation of 0.075 μW per sample and a die area of 0.08 mm 2 . The output frequency is shown to increase exponentially with variations in temperature, while the shrinking pulse in the TDC shows linear dependence on temperature.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/JSEN.2016.2585820</doi><tpages>7</tpages></addata></record> |
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| subjects | CMOS CMOS integrated circuits Control systems Delay lines Delays Digital Inverters Memory (computers) Random access memory Selectors self-refresh TDC Temperature Temperature compensation Temperature dependence Temperature sensors time-mode |
| title | CMOS Integrated Time-Mode Temperature Sensor for Self-Refresh Control in DRAM Memory Cell |
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