Full-atomistic nanoscale modeling of the ion beam sputtering deposition of SiO2 thin films

The previously developed high-performance parallel method of the atomistic simulation of the ion beam sputtering deposition process is applied to the SiO2 thin films. Structural properties of deposited films such as density, concentration of point defects, ring statistics, as well as effects arising...

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Veröffentlicht in:	Journal of non-crystalline solids 2016-09, Vol.448, p.1-5
Hauptverfasser:	Grigoriev, F.V., Sulimov, A.V., Katkova, E.V., Kochikov, I.V., Kondakova, O.A., Sulimov, V.B., Tikhonravov, A.V.
Format:	Artikel
Sprache:	eng
Schlagworte:	Atomic structure Density Deposition Ion beam sputtering Molecular dynamics Optical films Silica glass Silicon Silicon dioxide Statistics Thin films
Online-Zugang:	Volltext
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