Integrated all-optical switch with 10 ps time resolution enabled by ALD

The potential of GaAs‐based photonic crystals for fast all‐optical switching in the telecom spectral range is exploited by controlling the surface recombination and, thereby, the carrier relaxation dynamics. The structure is entirely coated with a layer of aluminium oxide using atomic layer depositi...

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Veröffentlicht in:	Laser & photonics reviews 2016-05, Vol.10 (3), p.409-419
Hauptverfasser:	Moille, Gregory, Combrié, Sylvain, Morgenroth, Laurence, Lehoucq, Gaëlle, Neuilly, François, Hu, Bowen, Decoster, Didier, de Rossi, Alfredo
Format:	Artikel
Sprache:	eng
Schlagworte:	Atomic layer deposition Carrier lifetime Carriers Devices integrated optics Nonlinear dynamics Nonlinear optics optical switching devices Oxidation Pumps semiconductors Spectra wavelength conversion devices
Online-Zugang:	Volltext
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