Strategies for Inorganic Incorporation using Neat Block Copolymer Thin Films for Etch Mask Function and Nanotechnological Application

Block copolymers (BCPs) and their directed self‐assembly (DSA) has emerged as a realizable complementary tool to aid optical patterning of device elements for future integrated circuit advancements. Methods to enhance BCP etch contrast for DSA application and further potential applications of inorganic nanomaterial features (e.g., semiconductor, dielectric, metal and metal oxide) are examined. Strategies to modify, infiltrate and controllably deposit inorganic materials by utilizing neat self‐assembled BCP thin films open a rich design space to fabricate functional features in the nanoscale regime. An understanding and overview on innovative ways for the selective inclusion/infiltration or deposition of inorganic moieties in microphase separated BCP nanopatterns is provided. Early initial inclusion methods in the field and exciting contemporary reports to further augment etch contrast in BCPs for pattern transfer application are described. Specifically, the use of evaporation and sputtering methods, atomic layer deposition, sequential infiltration synthesis, metal‐salt inclusion and aqueous metal reduction methodologies forming isolated nanofeatures are highlighted in di‐BCP systems. Functionalities and newly reported uses for electronic and non‐electronic technologies based on the inherent properties of incorporated inorganic nanostructures using di‐BCP templates are highlighted. We outline the potential for extension of incorporation methods to triblock copolymer features for more diverse applications. Challenges and emerging areas of interest for inorganic infiltration of BCPs are also discussed. Innovative strategies for the inorganic infiltration of “neat” block copolymer thin films for functional application are highlighted. A range of diverse routes for precisely incorporating inorganic material in self‐assembled block copolymer patterns are detailed. Both electronic and non‐electronic applications based on the incorporated inorganic features are discussed.