Quantized Conductance and Large g‑Factor Anisotropy in InSb Quantum Point Contacts

Because of a strong spin–orbit interaction and a large Landé g-factor, InSb plays an important role in research on Majorana fermions. To further explore novel properties of Majorana fermions, hybrid devices based on quantum wells are conceived as an alternative approach to nanowires. In this work,...

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Veröffentlicht in:	Nano letters 2016-12, Vol.16 (12), p.7509-7513
Hauptverfasser:	Qu, Fanming, van Veen, Jasper, de Vries, Folkert K, Beukman, Arjan J. A, Wimmer, Michael, Yi, Wei, Kiselev, Andrey A, Nguyen, Binh-Minh, Sokolich, Marko, Manfra, Michael J, Nichele, Fabrizio, Marcus, Charles M, Kouwenhoven, Leo P
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creator	Qu, Fanming van Veen, Jasper de Vries, Folkert K Beukman, Arjan J. A Wimmer, Michael Yi, Wei Kiselev, Andrey A Nguyen, Binh-Minh Sokolich, Marko Manfra, Michael J Nichele, Fabrizio Marcus, Charles M Kouwenhoven, Leo P
description	Because of a strong spin–orbit interaction and a large Landé g-factor, InSb plays an important role in research on Majorana fermions. To further explore novel properties of Majorana fermions, hybrid devices based on quantum wells are conceived as an alternative approach to nanowires. In this work, we report a pronounced conductance quantization of quantum point contact devices in InSb/InAlSb quantum wells. Using a rotating magnetic field, we observe a large in-plane (\|g 1\| = 26) and out-of-plane (\|g 1\| = 52) g-factor anisotropy. Additionally, we investigate crossings of subbands with opposite spins and extract the electron effective mass from magnetic depopulation of one-dimensional subbands.
doi_str_mv	10.1021/acs.nanolett.6b03297
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title	Quantized Conductance and Large g‑Factor Anisotropy in InSb Quantum Point Contacts
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