Large-Area Dry Transfer of Single-Crystalline Epitaxial Bismuth Thin Films

We report the first direct dry transfer of a single-crystalline thin film grown by molecular beam epitaxy. A double cantilever beam fracture technique was used to transfer epitaxial bismuth thin films grown on silicon (111) to silicon strips coated with epoxy. The transferred bismuth films retained...

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Veröffentlicht in:Nano letters 2016-11, Vol.16 (11), p.6931-6938
Hauptverfasser: Walker, Emily S, Na, Seung Ryul, Jung, Daehwan, March, Stephen D, Kim, Joon-Seok, Trivedi, Tanuj, Li, Wei, Tao, Li, Lee, Minjoo L, Liechti, Kenneth M, Akinwande, Deji, Bank, Seth R
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container_end_page 6938
container_issue 11
container_start_page 6931
container_title Nano letters
container_volume 16
creator Walker, Emily S
Na, Seung Ryul
Jung, Daehwan
March, Stephen D
Kim, Joon-Seok
Trivedi, Tanuj
Li, Wei
Tao, Li
Lee, Minjoo L
Liechti, Kenneth M
Akinwande, Deji
Bank, Seth R
description We report the first direct dry transfer of a single-crystalline thin film grown by molecular beam epitaxy. A double cantilever beam fracture technique was used to transfer epitaxial bismuth thin films grown on silicon (111) to silicon strips coated with epoxy. The transferred bismuth films retained electrical, optical, and structural properties comparable to the as-grown epitaxial films. Additionally, we isolated the bismuth thin films on freestanding flexible cured-epoxy post-transfer. The adhesion energy at the bismuth/silicon interface was measured to be ∼1 J/m2, comparable to that of exfoliated and wet transferred graphene. This low adhesion energy and ease of transfer is unexpected for an epitaxially grown film and may enable the study of bismuth’s unique electronic and spintronic properties on arbitrary substrates. Moreover, this method suggests a route to integrate other group-V epitaxial films (i.e., phosphorus) with arbitrary substrates, as well as potentially to isolate bismuthene, the atomic thin-film limit of bismuth.
doi_str_mv 10.1021/acs.nanolett.6b02931
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title Large-Area Dry Transfer of Single-Crystalline Epitaxial Bismuth Thin Films
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