Resistive Transition of High- T Superconducting Films With Regular Arrays of T-Domains Induced by Micro- or Nanofunctionalization
We present numerical simulations of the width and shape of the resistance versus temperature transition, i.e., R(T), under zero external magnetic field, in a high-temperature superconducting film with a regular pattern of local variations of critical temperatures, induced, e.g., by means of micro- o...
Gespeichert in:
| Veröffentlicht in: | IEEE transactions on applied superconductivity 2016-04, Vol.26 (3), p.1-4 |
|---|---|
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 4 |
|---|---|
| container_issue | 3 |
| container_start_page | 1 |
| container_title | IEEE transactions on applied superconductivity |
| container_volume | 26 |
| creator | Verde, J. C. Doval, J. M. Ramos-Alvarez, A. Sonora, D. Ramallo, M. V. |
| description | We present numerical simulations of the width and shape of the resistance versus temperature transition, i.e., R(T), under zero external magnetic field, in a high-temperature superconducting film with a regular pattern of local variations of critical temperatures, induced, e.g., by means of micro- or nanofunctionalization. To obtain a realistic R(T), we also take into consideration the widening of the transition due to Gaussian and vortex-antivortex fluctuations, plus the effects of the intrinsic inhomogeneity due to the nonstoichiomety of the dopant ions. We focus mainly on square-lattice patterns and show that they may be used to engineer R(T) transitions broader or narrower than the ones of the parent nonstructured film. |
| doi_str_mv | 10.1109/TASC.2016.2525979 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_proquest_miscellaneous_1825579494</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>7399723</ieee_id><sourcerecordid>1825579494</sourcerecordid><originalsourceid>FETCH-LOGICAL-c1434-1639ed8d18b4526f89b730e3f130809e7874be667f02c1a13f762fd6284fe50c3</originalsourceid><addsrcrecordid>eNo9kMtOwzAQRSMEEs8PQGy8ZJPi8SO2l1V5SjwkCGIZucm4GKVxsROksuPPaVTEau7inpnRybJToBMAai7K6ctswigUEyaZNMrsZAcgpc6ZBLm7yVRCrhnj-9lhSh-UgtBCHmQ_z5h86v0XkjLaLvneh44ER2794j0nJXkZVhjr0DVD3ftuQa59u0zkzffv5BkXQ2sjmcZo12mEyvwyLK3vErkbAWzIfE0efB1DTkIkj7YLbujq8YZt_bcdw3G252yb8ORvHmWv11fl7Da_f7q5m03v8xoEFzkU3GCjG9BzIVnhtJkrTpE74FRTg0orMceiUI6yGixwpwrmmoJp4VDSmh9l59u9qxg-B0x9tfSpxra1HYYhVaCZlMoIIzZV2FY3j6cU0VWr6Jc2riug1ai7GnVXo-7qT_eGOdsyHhH_-4oboxjnv0RqfEU</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1825579494</pqid></control><display><type>article</type><title>Resistive Transition of High- T Superconducting Films With Regular Arrays of T-Domains Induced by Micro- or Nanofunctionalization</title><source>IEEE Electronic Library (IEL)</source><creator>Verde, J. C. ; Doval, J. M. ; Ramos-Alvarez, A. ; Sonora, D. ; Ramallo, M. V.</creator><creatorcontrib>Verde, J. C. ; Doval, J. M. ; Ramos-Alvarez, A. ; Sonora, D. ; Ramallo, M. V.</creatorcontrib><description>We present numerical simulations of the width and shape of the resistance versus temperature transition, i.e., R(T), under zero external magnetic field, in a high-temperature superconducting film with a regular pattern of local variations of critical temperatures, induced, e.g., by means of micro- or nanofunctionalization. To obtain a realistic R(T), we also take into consideration the widening of the transition due to Gaussian and vortex-antivortex fluctuations, plus the effects of the intrinsic inhomogeneity due to the nonstoichiomety of the dopant ions. We focus mainly on square-lattice patterns and show that they may be used to engineer R(T) transitions broader or narrower than the ones of the parent nonstructured film.</description><identifier>ISSN: 1051-8223</identifier><identifier>EISSN: 1558-2515</identifier><identifier>DOI: 10.1109/TASC.2016.2525979</identifier><identifier>CODEN: ITASE9</identifier><language>eng</language><publisher>IEEE</publisher><subject>Arrays ; Fluctuation ; Gaussian ; High-temperature superconductors ; Inhomogeneity ; Magnetic fields ; Mathematical model ; Nanostructure ; Nonhomogeneous media ; Numerical models ; Resistance ; Shape ; Superconducting devices ; Superconducting films ; Superconducting transition temperature ; Superconductivity</subject><ispartof>IEEE transactions on applied superconductivity, 2016-04, Vol.26 (3), p.1-4</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c1434-1639ed8d18b4526f89b730e3f130809e7874be667f02c1a13f762fd6284fe50c3</citedby><cites>FETCH-LOGICAL-c1434-1639ed8d18b4526f89b730e3f130809e7874be667f02c1a13f762fd6284fe50c3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/7399723$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27923,27924,54757</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/7399723$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Verde, J. C.</creatorcontrib><creatorcontrib>Doval, J. M.</creatorcontrib><creatorcontrib>Ramos-Alvarez, A.</creatorcontrib><creatorcontrib>Sonora, D.</creatorcontrib><creatorcontrib>Ramallo, M. V.</creatorcontrib><title>Resistive Transition of High- T Superconducting Films With Regular Arrays of T-Domains Induced by Micro- or Nanofunctionalization</title><title>IEEE transactions on applied superconductivity</title><addtitle>TASC</addtitle><description>We present numerical simulations of the width and shape of the resistance versus temperature transition, i.e., R(T), under zero external magnetic field, in a high-temperature superconducting film with a regular pattern of local variations of critical temperatures, induced, e.g., by means of micro- or nanofunctionalization. To obtain a realistic R(T), we also take into consideration the widening of the transition due to Gaussian and vortex-antivortex fluctuations, plus the effects of the intrinsic inhomogeneity due to the nonstoichiomety of the dopant ions. We focus mainly on square-lattice patterns and show that they may be used to engineer R(T) transitions broader or narrower than the ones of the parent nonstructured film.</description><subject>Arrays</subject><subject>Fluctuation</subject><subject>Gaussian</subject><subject>High-temperature superconductors</subject><subject>Inhomogeneity</subject><subject>Magnetic fields</subject><subject>Mathematical model</subject><subject>Nanostructure</subject><subject>Nonhomogeneous media</subject><subject>Numerical models</subject><subject>Resistance</subject><subject>Shape</subject><subject>Superconducting devices</subject><subject>Superconducting films</subject><subject>Superconducting transition temperature</subject><subject>Superconductivity</subject><issn>1051-8223</issn><issn>1558-2515</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kMtOwzAQRSMEEs8PQGy8ZJPi8SO2l1V5SjwkCGIZucm4GKVxsROksuPPaVTEau7inpnRybJToBMAai7K6ctswigUEyaZNMrsZAcgpc6ZBLm7yVRCrhnj-9lhSh-UgtBCHmQ_z5h86v0XkjLaLvneh44ER2794j0nJXkZVhjr0DVD3ftuQa59u0zkzffv5BkXQ2sjmcZo12mEyvwyLK3vErkbAWzIfE0efB1DTkIkj7YLbujq8YZt_bcdw3G252yb8ORvHmWv11fl7Da_f7q5m03v8xoEFzkU3GCjG9BzIVnhtJkrTpE74FRTg0orMceiUI6yGixwpwrmmoJp4VDSmh9l59u9qxg-B0x9tfSpxra1HYYhVaCZlMoIIzZV2FY3j6cU0VWr6Jc2riug1ai7GnVXo-7qT_eGOdsyHhH_-4oboxjnv0RqfEU</recordid><startdate>201604</startdate><enddate>201604</enddate><creator>Verde, J. C.</creator><creator>Doval, J. M.</creator><creator>Ramos-Alvarez, A.</creator><creator>Sonora, D.</creator><creator>Ramallo, M. V.</creator><general>IEEE</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>F28</scope><scope>FR3</scope><scope>L7M</scope></search><sort><creationdate>201604</creationdate><title>Resistive Transition of High- T Superconducting Films With Regular Arrays of T-Domains Induced by Micro- or Nanofunctionalization</title><author>Verde, J. C. ; Doval, J. M. ; Ramos-Alvarez, A. ; Sonora, D. ; Ramallo, M. V.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c1434-1639ed8d18b4526f89b730e3f130809e7874be667f02c1a13f762fd6284fe50c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>Arrays</topic><topic>Fluctuation</topic><topic>Gaussian</topic><topic>High-temperature superconductors</topic><topic>Inhomogeneity</topic><topic>Magnetic fields</topic><topic>Mathematical model</topic><topic>Nanostructure</topic><topic>Nonhomogeneous media</topic><topic>Numerical models</topic><topic>Resistance</topic><topic>Shape</topic><topic>Superconducting devices</topic><topic>Superconducting films</topic><topic>Superconducting transition temperature</topic><topic>Superconductivity</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Verde, J. C.</creatorcontrib><creatorcontrib>Doval, J. M.</creatorcontrib><creatorcontrib>Ramos-Alvarez, A.</creatorcontrib><creatorcontrib>Sonora, D.</creatorcontrib><creatorcontrib>Ramallo, M. V.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on applied superconductivity</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Verde, J. C.</au><au>Doval, J. M.</au><au>Ramos-Alvarez, A.</au><au>Sonora, D.</au><au>Ramallo, M. V.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Resistive Transition of High- T Superconducting Films With Regular Arrays of T-Domains Induced by Micro- or Nanofunctionalization</atitle><jtitle>IEEE transactions on applied superconductivity</jtitle><stitle>TASC</stitle><date>2016-04</date><risdate>2016</risdate><volume>26</volume><issue>3</issue><spage>1</spage><epage>4</epage><pages>1-4</pages><issn>1051-8223</issn><eissn>1558-2515</eissn><coden>ITASE9</coden><abstract>We present numerical simulations of the width and shape of the resistance versus temperature transition, i.e., R(T), under zero external magnetic field, in a high-temperature superconducting film with a regular pattern of local variations of critical temperatures, induced, e.g., by means of micro- or nanofunctionalization. To obtain a realistic R(T), we also take into consideration the widening of the transition due to Gaussian and vortex-antivortex fluctuations, plus the effects of the intrinsic inhomogeneity due to the nonstoichiomety of the dopant ions. We focus mainly on square-lattice patterns and show that they may be used to engineer R(T) transitions broader or narrower than the ones of the parent nonstructured film.</abstract><pub>IEEE</pub><doi>10.1109/TASC.2016.2525979</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 1051-8223 |
| ispartof | IEEE transactions on applied superconductivity, 2016-04, Vol.26 (3), p.1-4 |
| issn | 1051-8223 1558-2515 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_1825579494 |
| source | IEEE Electronic Library (IEL) |
| subjects | Arrays Fluctuation Gaussian High-temperature superconductors Inhomogeneity Magnetic fields Mathematical model Nanostructure Nonhomogeneous media Numerical models Resistance Shape Superconducting devices Superconducting films Superconducting transition temperature Superconductivity |
| title | Resistive Transition of High- T Superconducting Films With Regular Arrays of T-Domains Induced by Micro- or Nanofunctionalization |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-11T07%3A33%3A10IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Resistive%20Transition%20of%20High-%20T%20Superconducting%20Films%20With%20Regular%20Arrays%20of%20T-Domains%20Induced%20by%20Micro-%20or%20Nanofunctionalization&rft.jtitle=IEEE%20transactions%20on%20applied%20superconductivity&rft.au=Verde,%20J.%20C.&rft.date=2016-04&rft.volume=26&rft.issue=3&rft.spage=1&rft.epage=4&rft.pages=1-4&rft.issn=1051-8223&rft.eissn=1558-2515&rft.coden=ITASE9&rft_id=info:doi/10.1109/TASC.2016.2525979&rft_dat=%3Cproquest_RIE%3E1825579494%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1825579494&rft_id=info:pmid/&rft_ieee_id=7399723&rfr_iscdi=true |