Laterally coupled distributed feedback cascade diode lasers emitting near 2.9 [mu]m

Cascade type-I quantum well GaSb-based laterally coupled distributed feedback diode lasers emitting near 2.9 [mu]m were designed and fabricated. Second order index grating with period of 825 nm was defined by e-beam lithography and etched on both sides of 4-[mu]m-wide shallow ridge waveguide. Anti-/...

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Veröffentlicht in:	Electronics letters 2016-05, Vol.52 (10), p.857-859
Hauptverfasser:	Hosoda, T, Fradet, M, Frez, C, Shterengas, L, Sander, S, ouhar, S, Belenky, G
Format:	Artikel
Sprache:	eng
Schlagworte:	Cascades Diode lasers Feedback Joining Lithography Reflection Ridges Tuning
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creator	Hosoda, T Fradet, M Frez, C Shterengas, L Sander, S ouhar, S Belenky, G
description	Cascade type-I quantum well GaSb-based laterally coupled distributed feedback diode lasers emitting near 2.9 [mu]m were designed and fabricated. Second order index grating with period of 825 nm was defined by e-beam lithography and etched on both sides of 4-[mu]m-wide shallow ridge waveguide. Anti-/neutral reflection coated 2-mm-long devices that were solder-mounted epitaxial side-up demonstrated stable single frequency operation in a wide temperature range with output power of 13 mW at 20[degrees]C. Bragg wavelength temperature tuning rate was ?0.32 nm/K.
doi_str_mv	10.1049/el.2016.0115
format	Article
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source	Access via Wiley Online Library; Wiley Online Library Open Access; EZB-FREE-00999 freely available EZB journals
subjects	Cascades Diode lasers Feedback Joining Lithography Reflection Ridges Tuning
title	Laterally coupled distributed feedback cascade diode lasers emitting near 2.9 [mu]m
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