Development of semitransparent CIGS thin-film solar cells modified with a sulfurized-AgGa layer for building applications
Different from conventional photovoltaics, building-integrated photovoltaics needs not only high performance but also a high degree of transparency. Nevertheless, the Cu(In,Ga)Se 2 (CIGS) solar cell has advantages in terms of the highest conversion efficiency and stability among all thin-film-based...
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| Veröffentlicht in: | Journal of materials chemistry. A, Materials for energy and sustainability Materials for energy and sustainability, 2016-01, Vol.4 (27), p.1542-1551 |
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| creator | Saifullah, Muhammad Ahn, SeJin Gwak, Jihye Ahn, Seungkyu Kim, Kihwan Cho, Junsik Park, Joo Hyung Eo, Young Joo Cho, Ara Yoo, Jin-Su Yun, Jae Ho |
| description | Different from conventional photovoltaics, building-integrated photovoltaics needs not only high performance but also a high degree of transparency. Nevertheless, the Cu(In,Ga)Se
2
(CIGS) solar cell has advantages in terms of the highest conversion efficiency and stability among all thin-film-based solar cells. The semitransparent (ST) CIGS solar cell using an ultrathin CIGS absorber on a transparent conducting oxide (TCO) experiences loss in fill factor and open circuit voltage due to the poor grain morphology and CIGS/TCO interface. Thus, these issues must be addressed to realize ST CIGS solar cells. Wide-bandgap (1.5 eV) submicron CIGS-based solar cells were prepared in this study unlike conventional CIGS with a bandgap of 1.2 eV, in order to enhance see-throughness. But such cells demonstrated low conversion efficiency due to the poor grain morphology and absence of back grading. Therefore, for the sake of improving grain morphology and to create back grading, a sulfurized-AgGa (AGS) layer was deposited between CIGS and the indium tin oxide (ITO) back contact. Ag from the AGS layer diffused throughout the absorber and thus ameliorated the grain morphology. However, Ga and S in the AGS layer remained confined near the back contact, therefore resulting in the creation of back grading. Consequently, a solar cell based on 230 nm thick CIGS modified with a 45 nm thick AGS layer exhibited efficiency of 5.94% with averaged visible transmittance over 25%. This is the highest reported efficiency for a ST CIGS solar cell with over 20% visible transparency. The CIGS solar cell based on this novel approach can be a competent candidate for building-integrated semitransparent photovoltaics applications.
The insertion of sulfurized-AgGa layer at CIGS/ITO interface reduced the bulk and back surface recombination and thus ameliorated the PV performance without adversely affecting the cell's visible transmittance. |
| doi_str_mv | 10.1039/c6ta01909a |
| format | Article |
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2
(CIGS) solar cell has advantages in terms of the highest conversion efficiency and stability among all thin-film-based solar cells. The semitransparent (ST) CIGS solar cell using an ultrathin CIGS absorber on a transparent conducting oxide (TCO) experiences loss in fill factor and open circuit voltage due to the poor grain morphology and CIGS/TCO interface. Thus, these issues must be addressed to realize ST CIGS solar cells. Wide-bandgap (1.5 eV) submicron CIGS-based solar cells were prepared in this study unlike conventional CIGS with a bandgap of 1.2 eV, in order to enhance see-throughness. But such cells demonstrated low conversion efficiency due to the poor grain morphology and absence of back grading. Therefore, for the sake of improving grain morphology and to create back grading, a sulfurized-AgGa (AGS) layer was deposited between CIGS and the indium tin oxide (ITO) back contact. Ag from the AGS layer diffused throughout the absorber and thus ameliorated the grain morphology. However, Ga and S in the AGS layer remained confined near the back contact, therefore resulting in the creation of back grading. Consequently, a solar cell based on 230 nm thick CIGS modified with a 45 nm thick AGS layer exhibited efficiency of 5.94% with averaged visible transmittance over 25%. This is the highest reported efficiency for a ST CIGS solar cell with over 20% visible transparency. The CIGS solar cell based on this novel approach can be a competent candidate for building-integrated semitransparent photovoltaics applications.
The insertion of sulfurized-AgGa layer at CIGS/ITO interface reduced the bulk and back surface recombination and thus ameliorated the PV performance without adversely affecting the cell's visible transmittance.</description><identifier>ISSN: 2050-7488</identifier><identifier>EISSN: 2050-7496</identifier><identifier>DOI: 10.1039/c6ta01909a</identifier><language>eng</language><subject>Construction ; Contact ; Grading ; Grains ; Indium tin oxide ; Morphology ; Photovoltaic cells ; Solar cells ; Thin films</subject><ispartof>Journal of materials chemistry. A, Materials for energy and sustainability, 2016-01, Vol.4 (27), p.1542-1551</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c360t-c16759ab8d8be597922cc6b690debad5c4108105a584b1a1ec64703e39533bda3</citedby><cites>FETCH-LOGICAL-c360t-c16759ab8d8be597922cc6b690debad5c4108105a584b1a1ec64703e39533bda3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Saifullah, Muhammad</creatorcontrib><creatorcontrib>Ahn, SeJin</creatorcontrib><creatorcontrib>Gwak, Jihye</creatorcontrib><creatorcontrib>Ahn, Seungkyu</creatorcontrib><creatorcontrib>Kim, Kihwan</creatorcontrib><creatorcontrib>Cho, Junsik</creatorcontrib><creatorcontrib>Park, Joo Hyung</creatorcontrib><creatorcontrib>Eo, Young Joo</creatorcontrib><creatorcontrib>Cho, Ara</creatorcontrib><creatorcontrib>Yoo, Jin-Su</creatorcontrib><creatorcontrib>Yun, Jae Ho</creatorcontrib><title>Development of semitransparent CIGS thin-film solar cells modified with a sulfurized-AgGa layer for building applications</title><title>Journal of materials chemistry. A, Materials for energy and sustainability</title><description>Different from conventional photovoltaics, building-integrated photovoltaics needs not only high performance but also a high degree of transparency. Nevertheless, the Cu(In,Ga)Se
2
(CIGS) solar cell has advantages in terms of the highest conversion efficiency and stability among all thin-film-based solar cells. The semitransparent (ST) CIGS solar cell using an ultrathin CIGS absorber on a transparent conducting oxide (TCO) experiences loss in fill factor and open circuit voltage due to the poor grain morphology and CIGS/TCO interface. Thus, these issues must be addressed to realize ST CIGS solar cells. Wide-bandgap (1.5 eV) submicron CIGS-based solar cells were prepared in this study unlike conventional CIGS with a bandgap of 1.2 eV, in order to enhance see-throughness. But such cells demonstrated low conversion efficiency due to the poor grain morphology and absence of back grading. Therefore, for the sake of improving grain morphology and to create back grading, a sulfurized-AgGa (AGS) layer was deposited between CIGS and the indium tin oxide (ITO) back contact. Ag from the AGS layer diffused throughout the absorber and thus ameliorated the grain morphology. However, Ga and S in the AGS layer remained confined near the back contact, therefore resulting in the creation of back grading. Consequently, a solar cell based on 230 nm thick CIGS modified with a 45 nm thick AGS layer exhibited efficiency of 5.94% with averaged visible transmittance over 25%. This is the highest reported efficiency for a ST CIGS solar cell with over 20% visible transparency. The CIGS solar cell based on this novel approach can be a competent candidate for building-integrated semitransparent photovoltaics applications.
The insertion of sulfurized-AgGa layer at CIGS/ITO interface reduced the bulk and back surface recombination and thus ameliorated the PV performance without adversely affecting the cell's visible transmittance.</description><subject>Construction</subject><subject>Contact</subject><subject>Grading</subject><subject>Grains</subject><subject>Indium tin oxide</subject><subject>Morphology</subject><subject>Photovoltaic cells</subject><subject>Solar cells</subject><subject>Thin films</subject><issn>2050-7488</issn><issn>2050-7496</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNqNkcFLwzAUh4soOOYu3oUcRagmTZMmxzJ1DgYenOfymqZbJG1q0irzr3d1Mq_-Lu_x4-PB44uiS4JvCabyTvEeMJFYwkk0STDDcZZKfnrchTiPZiG84X0ExlzKSbS71x_auq7RbY9cjYJuTO-hDR34sZovFy-o35o2ro1tUHAWPFLa2oAaV5na6Ap9mn6LAIXB1oM3X7qK880CkIWd9qh2HpWDsZVpNwi6zhoFvXFtuIjOarBBz37nNHp9fFjPn-LV82I5z1exohz3sSI8YxJKUYlSM5nJJFGKl1ziSpdQMZUSLAhmwERaEiBa8TTDVFPJKC0roNPo-nC38-590KEvGhPGD6DVbggFEQnbJ-X0HygWnDHCRvTmgCrvQvC6LjpvGvC7guBitFHM-Tr_sZHv4asD7IM6cn-26DdeWIea</recordid><startdate>20160101</startdate><enddate>20160101</enddate><creator>Saifullah, Muhammad</creator><creator>Ahn, SeJin</creator><creator>Gwak, Jihye</creator><creator>Ahn, Seungkyu</creator><creator>Kim, Kihwan</creator><creator>Cho, Junsik</creator><creator>Park, Joo Hyung</creator><creator>Eo, Young Joo</creator><creator>Cho, Ara</creator><creator>Yoo, Jin-Su</creator><creator>Yun, Jae Ho</creator><scope>AAYXX</scope><scope>CITATION</scope><scope>7ST</scope><scope>C1K</scope><scope>SOI</scope><scope>7SP</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20160101</creationdate><title>Development of semitransparent CIGS thin-film solar cells modified with a sulfurized-AgGa layer for building applications</title><author>Saifullah, Muhammad ; Ahn, SeJin ; Gwak, Jihye ; Ahn, Seungkyu ; Kim, Kihwan ; Cho, Junsik ; Park, Joo Hyung ; Eo, Young Joo ; Cho, Ara ; Yoo, Jin-Su ; Yun, Jae Ho</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c360t-c16759ab8d8be597922cc6b690debad5c4108105a584b1a1ec64703e39533bda3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>Construction</topic><topic>Contact</topic><topic>Grading</topic><topic>Grains</topic><topic>Indium tin oxide</topic><topic>Morphology</topic><topic>Photovoltaic cells</topic><topic>Solar cells</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Saifullah, Muhammad</creatorcontrib><creatorcontrib>Ahn, SeJin</creatorcontrib><creatorcontrib>Gwak, Jihye</creatorcontrib><creatorcontrib>Ahn, Seungkyu</creatorcontrib><creatorcontrib>Kim, Kihwan</creatorcontrib><creatorcontrib>Cho, Junsik</creatorcontrib><creatorcontrib>Park, Joo Hyung</creatorcontrib><creatorcontrib>Eo, Young Joo</creatorcontrib><creatorcontrib>Cho, Ara</creatorcontrib><creatorcontrib>Yoo, Jin-Su</creatorcontrib><creatorcontrib>Yun, Jae Ho</creatorcontrib><collection>CrossRef</collection><collection>Environment Abstracts</collection><collection>Environmental Sciences and Pollution Management</collection><collection>Environment Abstracts</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of materials chemistry. A, Materials for energy and sustainability</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Saifullah, Muhammad</au><au>Ahn, SeJin</au><au>Gwak, Jihye</au><au>Ahn, Seungkyu</au><au>Kim, Kihwan</au><au>Cho, Junsik</au><au>Park, Joo Hyung</au><au>Eo, Young Joo</au><au>Cho, Ara</au><au>Yoo, Jin-Su</au><au>Yun, Jae Ho</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Development of semitransparent CIGS thin-film solar cells modified with a sulfurized-AgGa layer for building applications</atitle><jtitle>Journal of materials chemistry. A, Materials for energy and sustainability</jtitle><date>2016-01-01</date><risdate>2016</risdate><volume>4</volume><issue>27</issue><spage>1542</spage><epage>1551</epage><pages>1542-1551</pages><issn>2050-7488</issn><eissn>2050-7496</eissn><abstract>Different from conventional photovoltaics, building-integrated photovoltaics needs not only high performance but also a high degree of transparency. Nevertheless, the Cu(In,Ga)Se
2
(CIGS) solar cell has advantages in terms of the highest conversion efficiency and stability among all thin-film-based solar cells. The semitransparent (ST) CIGS solar cell using an ultrathin CIGS absorber on a transparent conducting oxide (TCO) experiences loss in fill factor and open circuit voltage due to the poor grain morphology and CIGS/TCO interface. Thus, these issues must be addressed to realize ST CIGS solar cells. Wide-bandgap (1.5 eV) submicron CIGS-based solar cells were prepared in this study unlike conventional CIGS with a bandgap of 1.2 eV, in order to enhance see-throughness. But such cells demonstrated low conversion efficiency due to the poor grain morphology and absence of back grading. Therefore, for the sake of improving grain morphology and to create back grading, a sulfurized-AgGa (AGS) layer was deposited between CIGS and the indium tin oxide (ITO) back contact. Ag from the AGS layer diffused throughout the absorber and thus ameliorated the grain morphology. However, Ga and S in the AGS layer remained confined near the back contact, therefore resulting in the creation of back grading. Consequently, a solar cell based on 230 nm thick CIGS modified with a 45 nm thick AGS layer exhibited efficiency of 5.94% with averaged visible transmittance over 25%. This is the highest reported efficiency for a ST CIGS solar cell with over 20% visible transparency. The CIGS solar cell based on this novel approach can be a competent candidate for building-integrated semitransparent photovoltaics applications.
The insertion of sulfurized-AgGa layer at CIGS/ITO interface reduced the bulk and back surface recombination and thus ameliorated the PV performance without adversely affecting the cell's visible transmittance.</abstract><doi>10.1039/c6ta01909a</doi><tpages>1</tpages></addata></record> |
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| ispartof | Journal of materials chemistry. A, Materials for energy and sustainability, 2016-01, Vol.4 (27), p.1542-1551 |
| issn | 2050-7488 2050-7496 |
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| source | Royal Society Of Chemistry Journals 2008-; Alma/SFX Local Collection |
| subjects | Construction Contact Grading Grains Indium tin oxide Morphology Photovoltaic cells Solar cells Thin films |
| title | Development of semitransparent CIGS thin-film solar cells modified with a sulfurized-AgGa layer for building applications |
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