Molecular dynamics study on the thickness of damage layer in multiple grinding of monocrystalline silicon

The molecular dynamic (MD) simulation of monocrystalline silicon under multiple grinding is carried out to study the effect of multiple grinding on the thickness of damage layer. Four grinding processes are conducted on (001) along 〈−100〉 direction. The depth of grinding of the first grinding is 20Å...

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Veröffentlicht in:	Materials science in semiconductor processing 2016-08, Vol.51, p.15-19
Hauptverfasser:	Guo, Xiaoguang, Li, Qiang, Liu, Tao, Zhai, Changheng, Kang, Renke, Jin, Zhuji
Format:	Artikel
Sprache:	eng
Schlagworte:	Damage Damage layer Grinding Machining Molecular dynamics Monocrystalline silicon Multiple grinding Radial distribution Semiconductors Silicon Thickness
Online-Zugang:	Volltext
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