High Temperature Solution Growth of SiC by the Vertical Bridgman Method Using a Metal Free Si-C-Melt at 2300 °C

We developed a solution growth process related to the combination of the Vertical Bridgman and Vertical Gradient Freeze in a metal free Si-C melt at growth temperatures of 2300 °C. For this procedure we present a detailed description of the growth process and discuss the influence of different growt...

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Veröffentlicht in:	Materials Science Forum 2016-05, Vol.858, p.33-36
Hauptverfasser:	Mattle, Patrick, Schnitzer, Sarah, Schöler, Michael, Khodamoradi, Hossein, Wellmann, Peter J., Fahlbusch, Lars, Svensson, Bengt Gunnar, Iwamoto, Naoya
Format:	Artikel
Sprache:	eng
Schlagworte:	Bridgman method Crystal growth Crystals Materials science Melts Morphology Secondary ion mass spectrometry Silicon carbide
Online-Zugang:	Volltext
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