An Ultrafast I-V Measurement Technique Accounting for Capacitive and Leakage Currents in Reverse Mode for SiC Power Devices

An Ultrafast I-V Measurement Technique Accounting for Capacitive and Leakage Currents in Reverse Mode for SiC Power Devices

An ultrafast I-V measurement technique has been developed to measure simultaneously C-V and leakage parameters of SiC power devices. After considering the coupled contribution of both static (leakage current) and dynamic (capacitive current) aspects with respect to high dV/dt voltage ramps, a time-b...

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Veröffentlicht in:Materials Science Forum 2016-05, Vol.858, p.422-425
Hauptverfasser: Fonder, Jean Baptiste, Tournier, Dominique, Berthou, Maxime, Vergne, Bertrand, Brosselard, Pierre
Format: Artikel
Sprache:eng
Schlagworte:
Accounting
Diodes
Electric potential
Electronic devices
Leakage current
Ramps
Silicon carbide
Voltage
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Zusammenfassung:An ultrafast I-V measurement technique has been developed to measure simultaneously C-V and leakage parameters of SiC power devices. After considering the coupled contribution of both static (leakage current) and dynamic (capacitive current) aspects with respect to high dV/dt voltage ramps, a time-based characterization is detailed and validated on SiC Junction Barrier Schottky (JBS) power diodes.
ISSN:0255-5476
1662-9752
1662-9752
DOI:10.4028/www.scientific.net/MSF.858.422