Investigation of the Interface Quality and Reliability of 4H-SiC MOS Structure with NO and Forming Gas Annealing Treatment
Effects of NO and forming gas annealing treatment on the interface quality and reliability of 4H-SiC MOS were systematically studied by low temperature conductance measurements in combination with time-zero dielectric breakdown and time-dependent dielectric breakdown methods. The interface trap dens...
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| Veröffentlicht in: | Materials Science Forum 2016-05, Vol.858, p.647-650 |
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| creator | Peng, Zhao Yang Bai, Yun Tang, Yi Dan Shen, Hua Jun Li, Chengzhan Liu, Kean Wu, Jia Liu, Xin Yu Wang, Yi Yu |
| description | Effects of NO and forming gas annealing treatment on the interface quality and reliability of 4H-SiC MOS were systematically studied by low temperature conductance measurements in combination with time-zero dielectric breakdown and time-dependent dielectric breakdown methods. The interface trap density (Dit) showed no obvious reduction after forming gas annealing, and the values of Dit decreased significantly after combined NO and forming gas annealing treatment. The F-N barrier height, electric field to breakdown (Ebd) and charge to breakdown (Qbd) of the MOS structure increased from 2.42 eV, 10 MV/cm, 1mC/cm2 to 2.62 eV, 10.7 MV/cm, 78mC/cm2 after forming gas annealing. The values of F-N barrier height, Ebd and Qbd for MOS capacitors with combined NO and forming gas annealing treatment are 2.69 eV, 10.2 MV/cm, and 24mC/cm2. These results suggest that forming gas annealing is more effective in reliability improvement. While when considering the interface trap density, it seems that combined NO and forming gas annealing treatment is a better choice. |
| doi_str_mv | 10.4028/www.scientific.net/MSF.858.647 |
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The interface trap density (Dit) showed no obvious reduction after forming gas annealing, and the values of Dit decreased significantly after combined NO and forming gas annealing treatment. The F-N barrier height, electric field to breakdown (Ebd) and charge to breakdown (Qbd) of the MOS structure increased from 2.42 eV, 10 MV/cm, 1mC/cm2 to 2.62 eV, 10.7 MV/cm, 78mC/cm2 after forming gas annealing. The values of F-N barrier height, Ebd and Qbd for MOS capacitors with combined NO and forming gas annealing treatment are 2.69 eV, 10.2 MV/cm, and 24mC/cm2. These results suggest that forming gas annealing is more effective in reliability improvement. While when considering the interface trap density, it seems that combined NO and forming gas annealing treatment is a better choice.</description><identifier>ISSN: 0255-5476</identifier><identifier>ISSN: 1662-9752</identifier><identifier>ISBN: 3035710422</identifier><identifier>ISBN: 9783035710427</identifier><identifier>EISSN: 1662-9752</identifier><identifier>DOI: 10.4028/www.scientific.net/MSF.858.647</identifier><language>eng</language><publisher>Pfaffikon: Trans Tech Publications Ltd</publisher><subject>Annealing ; Barriers ; Breakdown ; Conductance ; Density ; Dielectric breakdown ; Forming ; Time dependence</subject><ispartof>Materials Science Forum, 2016-05, Vol.858, p.647-650</ispartof><rights>2016 Trans Tech Publications Ltd</rights><rights>Copyright Trans Tech Publications Ltd. May 2016</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c3047-4db698fa1dca8e08e9ef5d0262d3af39ad3b0fa14229e6b428a0206000cd97453</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttps://www.scientific.net/Image/TitleCover/3999?width=600</thumbnail><linktohtml>$$Uhttps://www.proquest.com/docview/1792605286?pq-origsite=primo$$EHTML$$P50$$Gproquest$$H</linktohtml><link.rule.ids>315,781,785,21394,21395,23261,27929,27930,33535,33536,33708,33709,34319,34320,43664,43792,44072</link.rule.ids></links><search><creatorcontrib>Peng, Zhao Yang</creatorcontrib><creatorcontrib>Bai, Yun</creatorcontrib><creatorcontrib>Tang, Yi Dan</creatorcontrib><creatorcontrib>Shen, Hua Jun</creatorcontrib><creatorcontrib>Li, Chengzhan</creatorcontrib><creatorcontrib>Liu, Kean</creatorcontrib><creatorcontrib>Wu, Jia</creatorcontrib><creatorcontrib>Liu, Xin Yu</creatorcontrib><creatorcontrib>Wang, Yi Yu</creatorcontrib><title>Investigation of the Interface Quality and Reliability of 4H-SiC MOS Structure with NO and Forming Gas Annealing Treatment</title><title>Materials Science Forum</title><description>Effects of NO and forming gas annealing treatment on the interface quality and reliability of 4H-SiC MOS were systematically studied by low temperature conductance measurements in combination with time-zero dielectric breakdown and time-dependent dielectric breakdown methods. The interface trap density (Dit) showed no obvious reduction after forming gas annealing, and the values of Dit decreased significantly after combined NO and forming gas annealing treatment. The F-N barrier height, electric field to breakdown (Ebd) and charge to breakdown (Qbd) of the MOS structure increased from 2.42 eV, 10 MV/cm, 1mC/cm2 to 2.62 eV, 10.7 MV/cm, 78mC/cm2 after forming gas annealing. The values of F-N barrier height, Ebd and Qbd for MOS capacitors with combined NO and forming gas annealing treatment are 2.69 eV, 10.2 MV/cm, and 24mC/cm2. These results suggest that forming gas annealing is more effective in reliability improvement. While when considering the interface trap density, it seems that combined NO and forming gas annealing treatment is a better choice.</description><subject>Annealing</subject><subject>Barriers</subject><subject>Breakdown</subject><subject>Conductance</subject><subject>Density</subject><subject>Dielectric breakdown</subject><subject>Forming</subject><subject>Time dependence</subject><issn>0255-5476</issn><issn>1662-9752</issn><issn>1662-9752</issn><isbn>3035710422</isbn><isbn>9783035710427</isbn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><sourceid>GNUQQ</sourceid><recordid>eNqNkdFq2zAUhsXWwdJu7yAYjN3YPZJlWb4ZK2FpA23Dlu5aKPJxo-LInSQvdE8_tRms7KpX4qCPX_rPR8hHBqUArk73-30ZrUOfXO9s6TGdXq0XpapVKUXzisyYlLxom5q_JscVVHXDQHB-RGbA67qoRSPfkuMY7wAqppickd9L_wtjcrcmudHTsadpi3TpE4beWKTfJjO49ECN7-h3HJzZuKc5g-KiWLs5vVqt6TqFyaYpIN27tKXXqyd-MYad87f03ER65j3mpDzdBDRplyu8I296M0R8__c8IT8WX2_mF8Xl6nw5P7ssbAWiKUS3ka3qDeusUQgKW-zrDrjkXWX6qjVdtYF8nXu2KDeCKwMcJADYrm1EXZ2QT4fc-zD-nHJZvXPR4jAYj-MUNVN5N0wwJjP64T_0bpyCz7_TrGm5hJqrR-rzgbJhjDFgr--D25nwoBnoR086e9L_POnsSWdPOnvS2VMO-HIISMH4mNBun73zsog_pQ-iFQ</recordid><startdate>20160524</startdate><enddate>20160524</enddate><creator>Peng, Zhao Yang</creator><creator>Bai, Yun</creator><creator>Tang, Yi Dan</creator><creator>Shen, Hua Jun</creator><creator>Li, Chengzhan</creator><creator>Liu, Kean</creator><creator>Wu, Jia</creator><creator>Liu, Xin Yu</creator><creator>Wang, Yi Yu</creator><general>Trans Tech Publications Ltd</general><scope>AAYXX</scope><scope>CITATION</scope><scope>3V.</scope><scope>7SR</scope><scope>7XB</scope><scope>88I</scope><scope>8BQ</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>8FK</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>GNUQQ</scope><scope>HCIFZ</scope><scope>JG9</scope><scope>KB.</scope><scope>M2P</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>Q9U</scope></search><sort><creationdate>20160524</creationdate><title>Investigation of the Interface Quality and Reliability of 4H-SiC MOS Structure with NO and Forming Gas Annealing Treatment</title><author>Peng, Zhao Yang ; 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The interface trap density (Dit) showed no obvious reduction after forming gas annealing, and the values of Dit decreased significantly after combined NO and forming gas annealing treatment. The F-N barrier height, electric field to breakdown (Ebd) and charge to breakdown (Qbd) of the MOS structure increased from 2.42 eV, 10 MV/cm, 1mC/cm2 to 2.62 eV, 10.7 MV/cm, 78mC/cm2 after forming gas annealing. The values of F-N barrier height, Ebd and Qbd for MOS capacitors with combined NO and forming gas annealing treatment are 2.69 eV, 10.2 MV/cm, and 24mC/cm2. These results suggest that forming gas annealing is more effective in reliability improvement. While when considering the interface trap density, it seems that combined NO and forming gas annealing treatment is a better choice.</abstract><cop>Pfaffikon</cop><pub>Trans Tech Publications Ltd</pub><doi>10.4028/www.scientific.net/MSF.858.647</doi><tpages>4</tpages></addata></record> |
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| subjects | Annealing Barriers Breakdown Conductance Density Dielectric breakdown Forming Time dependence |
| title | Investigation of the Interface Quality and Reliability of 4H-SiC MOS Structure with NO and Forming Gas Annealing Treatment |
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