The effect of bottom LaB sub(6) electrode and La sub(2)O sub(3) interlayer on resistance switching in devices based on Li-doped ZnO films

Resistance switching (RS) characteristics of Al/ZnO:Li/LaB sub(6) and Al/ZnO:Li/La sub(2)O sub(3)/LaB sub(6) devices in which LaB sub(6) and lithium-doped ZnO (ZnO:Li) films are regarded as shallow work function metal and p-type semiconductor, respectively, are studied. The alternation from bistable...

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Veröffentlicht in:	Physica status solidi. A, Applications and materials science Applications and materials science, 2016-06, Vol.213 (6), p.1592-1597
Hauptverfasser:	Kafadaryan, Y, Igityan, A, Aghamalyan, N, Petrosyan, S
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum Devices Electric potential Electrodes Materials science Polarity Switching Zinc oxide
Online-Zugang:	Volltext
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