DNA detection with top-down fabricated silicon nanowire transistor arrays in linear operation regime (Phys. Status Solidi A 6∕2016)

Silicon nanowire field-effect transistors (SiNW-FETs) were fabricated in a top-down process on wafer-scale. They can be regarded as nano-sized, long-channel, ion-sensitive fieldeffect transistor devices (ISFETs) and are offering a label-free sensing of DNA molecules based on the detection of the bio...

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Veröffentlicht in:	Physica status solidi. A, Applications and materials science Applications and materials science, 2016-06, Vol.213 (6), p.1369-1369
Hauptverfasser:	Schwartz, Miriam, Nguyen, Thanh Chien, Vu, Xuan Thang, Weil, Maryam, Wilhelm, Jannick, Wagner, Patrick, Thoelen, Ronald, Ingebrandt, Sven
Format:	Artikel
Sprache:	eng
Schlagworte:	Arrays Deoxyribonucleic acid Devices DNA Mathematical models Nanowires Semiconductor devices Silicon Transistors
Online-Zugang:	Volltext
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