Reduced porosity in metal-assisted chemical etching of vertical Si nanowire arrays by an induced magnetic field
High aspect ratio silicon nanowires (Si NWs) are produced by metal‐assisted chemical etching (MacEtch) combined with a magnetic field. The vertically applied magnetic field enhances the adhesion between a catalytic metal film and a semiconductor surface. As a result, very uniform Si NWs are formed w...
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| Veröffentlicht in: | Physica status solidi. A, Applications and materials science Applications and materials science, 2016-06, Vol.213 (6), p.1572-1576 |
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| container_issue | 6 |
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| container_title | Physica status solidi. A, Applications and materials science |
| container_volume | 213 |
| creator | Yun, Seokhun Choi, Chan Ho Patil, Dipali S. Kim, Doo Gun Lee, Taikjin Song, Gwang Yeom Heo, Jaeyeong Shin, Jae Cheol |
| description | High aspect ratio silicon nanowires (Si NWs) are produced by metal‐assisted chemical etching (MacEtch) combined with a magnetic field. The vertically applied magnetic field enhances the adhesion between a catalytic metal film and a semiconductor surface. As a result, very uniform Si NWs are formed with increased etch rate due to an easy transfer of holes from metal to Si. Importantly, the porosity of the Si NWs is dramatically reduced by an applied magnetic field because the metal film quickly sinks into the Si, thereby decreasing the excess hole diffusion from the NW sidewall. The combined process of MacEtch and a magnetic field is a promising approach to form high aspect ratio Si NWs with minimized etching damage. |
| doi_str_mv | 10.1002/pssa.201532831 |
| format | Article |
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The vertically applied magnetic field enhances the adhesion between a catalytic metal film and a semiconductor surface. As a result, very uniform Si NWs are formed with increased etch rate due to an easy transfer of holes from metal to Si. Importantly, the porosity of the Si NWs is dramatically reduced by an applied magnetic field because the metal film quickly sinks into the Si, thereby decreasing the excess hole diffusion from the NW sidewall. The combined process of MacEtch and a magnetic field is a promising approach to form high aspect ratio Si NWs with minimized etching damage.</description><identifier>ISSN: 1862-6300</identifier><identifier>EISSN: 1862-6319</identifier><identifier>DOI: 10.1002/pssa.201532831</identifier><language>eng</language><publisher>Weinheim: Blackwell Publishing Ltd</publisher><subject>adhesion ; Chemical etching ; electron microscopy ; Etching ; High aspect ratio ; magnetic field ; Magnetic fields ; Magnetism ; Metal films ; metal-assisted chemical etching ; Nanowires ; Porosity ; Semiconductors ; Silicon</subject><ispartof>Physica status solidi. A, Applications and materials science, 2016-06, Vol.213 (6), p.1572-1576</ispartof><rights>2016 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim</rights><rights>2016 WILEY-VCH Verlag GmbH & Co. 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The combined process of MacEtch and a magnetic field is a promising approach to form high aspect ratio Si NWs with minimized etching damage.</description><subject>adhesion</subject><subject>Chemical etching</subject><subject>electron microscopy</subject><subject>Etching</subject><subject>High aspect ratio</subject><subject>magnetic field</subject><subject>Magnetic fields</subject><subject>Magnetism</subject><subject>Metal films</subject><subject>metal-assisted chemical etching</subject><subject>Nanowires</subject><subject>Porosity</subject><subject>Semiconductors</subject><subject>Silicon</subject><issn>1862-6300</issn><issn>1862-6319</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNqFkUtPxCAUhRujic-taxI3bjpCaSks1fhKfMUZHztC6UXRPkboqP33MlMzMW5ccXP5zrncQxTtEjwiGCcHU-_VKMEkowmnZCXaIJwlMaNErC5rjNejTe9fMU6zNCcbUXsH5UxDiaata73temQbVEOnqlh5b30XrvQL1FarCkGnX2zzjFqDPsB1i97YokY17ad1gJRzqveo6JFqgs9gXKvnBgKLjIWq3I7WjKo87PycW9H96cnk-Dy-vDm7OD68jDXlnMTAwaSGpZyxhBdFWqqcl9rQ0KCmNEYLVvCwJcGEFQwwMUKnWmSG4EQxwelWtD_4Tl37PgPfydp6DVWlGmhnXhKeZBlJsMAB3fuDvrYz14TXSZKLMF_wBTUaKB1y8g6MnDpbK9dLguU8fznPXy7zDwIxCD5tBf0_tLwdjw9_a-NBO_-Ar6VWuTfJcppn8vH6TF5lRw-PXDzJCf0GNnGZ3g</recordid><startdate>201606</startdate><enddate>201606</enddate><creator>Yun, Seokhun</creator><creator>Choi, Chan Ho</creator><creator>Patil, Dipali S.</creator><creator>Kim, Doo Gun</creator><creator>Lee, Taikjin</creator><creator>Song, Gwang Yeom</creator><creator>Heo, Jaeyeong</creator><creator>Shin, Jae Cheol</creator><general>Blackwell Publishing Ltd</general><general>Wiley Subscription Services, Inc</general><scope>BSCLL</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>201606</creationdate><title>Reduced porosity in metal-assisted chemical etching of vertical Si nanowire arrays by an induced magnetic field</title><author>Yun, Seokhun ; Choi, Chan Ho ; Patil, Dipali S. ; Kim, Doo Gun ; Lee, Taikjin ; Song, Gwang Yeom ; Heo, Jaeyeong ; Shin, Jae Cheol</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c3881-e8ef4f6486628bb4da78dcf34863fdffc96b88311016b6e01f9c4c95f102a6983</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>adhesion</topic><topic>Chemical etching</topic><topic>electron microscopy</topic><topic>Etching</topic><topic>High aspect ratio</topic><topic>magnetic field</topic><topic>Magnetic fields</topic><topic>Magnetism</topic><topic>Metal films</topic><topic>metal-assisted chemical etching</topic><topic>Nanowires</topic><topic>Porosity</topic><topic>Semiconductors</topic><topic>Silicon</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yun, Seokhun</creatorcontrib><creatorcontrib>Choi, Chan Ho</creatorcontrib><creatorcontrib>Patil, Dipali S.</creatorcontrib><creatorcontrib>Kim, Doo Gun</creatorcontrib><creatorcontrib>Lee, Taikjin</creatorcontrib><creatorcontrib>Song, Gwang Yeom</creatorcontrib><creatorcontrib>Heo, Jaeyeong</creatorcontrib><creatorcontrib>Shin, Jae Cheol</creatorcontrib><collection>Istex</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Physica status solidi. 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| issn | 1862-6300 1862-6319 |
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| source | Wiley Online Library Journals Frontfile Complete |
| subjects | adhesion Chemical etching electron microscopy Etching High aspect ratio magnetic field Magnetic fields Magnetism Metal films metal-assisted chemical etching Nanowires Porosity Semiconductors Silicon |
| title | Reduced porosity in metal-assisted chemical etching of vertical Si nanowire arrays by an induced magnetic field |
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