Ion Implantation Defects in 4H-SiC DIMOSFET
In this paper the influence of point defects generated by the ion implantation process in 4H-SiC DIMOSFET has been studied in detail. The point defects generated by the source or body implantation process have been detected by micro-photoluminescence and the effect of these defects on the electrical...
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| Veröffentlicht in: | Materials Science Forum 2016-05, Vol.858, p.418-421 |
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| creator | Lorenti, Simona La Via, Francesco Russo, Alfio Coffa, Salvo Piluso, Nicolo Fontana, Enzo Marcellino, Cinzia M. |
| description | In this paper the influence of point defects generated by the ion implantation process in 4H-SiC DIMOSFET has been studied in detail. The point defects generated by the source or body implantation process have been detected by micro-photoluminescence and the effect of these defects on the electrical characteristics of the DIMOSFET has been studied. In particular it has been observed that a reduction of the source ion implanted dose produces a large reduction of point defects in the source region and a considerable improvement of the electrical characteristic of the DIMOSFET. |
| doi_str_mv | 10.4028/www.scientific.net/MSF.858.418 |
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| subjects | Defects Implantation Ion implantation Materials science Point defects Reduction |
| title | Ion Implantation Defects in 4H-SiC DIMOSFET |
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