Optimum Design of 4H-SiC Junction Barrier Schottky Diode with Consideration of the Anisotropic Impact Ionization

Optimum n-drift region of a 4H-SiC Junction Barrier Schottky Diode (JBS) was analyzed by simulation with consideration of the anisotropic impact ionization. According to the detailed simulations using SRIM and Sentaurus, model parameters of empirical equations were obtained through fitting, which sh...

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Veröffentlicht in:	Materials Science Forum 2016-05, Vol.858, p.745-748
Hauptverfasser:	Deviny, Ian, Ke, Mao Long, Jiang, Hua Ping, Zheng, Chang Wei, Sharma, Yogesh K., Dai, Xiao Ping
Format:	Artikel
Sprache:	eng
Schlagworte:	Anisotropy Avalanches Barriers Computer simulation Empirical equations Ionization Optimization Schottky diodes
Online-Zugang:	Volltext
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