Quantitative Dopant Profiling by Energy Filtering in the Scanning Electron Microscope

Two-dimensional dopant mapping using secondary electrons (SEs) in the scanning electron microscope (SEM) is a technique under intense research and development due to improvements in instrumental resolution and its potential to enable rapid low-cost diagnostics in process optimization for microelectr...

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Veröffentlicht in:	IEEE transactions on device and materials reliability 2016-06, Vol.16 (2), p.138-148
1. Verfasser:	Chee, Augustus K. W.
Format:	Magazinearticle
Sprache:	eng
Schlagworte:	Dopants Doping Energy resolution Filtering Filtration high-resolution imaging Homojunctions Mathematical models p\!-\!n junctions R&D Research & development Scanning electron microscopy semiconductor epitaxial layers Semiconductors Sensitivity Substrates
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