A Study of Photo-response and Photoelectrical properties of Cadmium Telluride Thin Film
The detailed analysis of photo-response and photoelectrical properties of thermally deposited Cadmium Telluride (CdTe) thin film has been reported in this paper. The photocurrent of the CdTe thin film was measured as a function of applied bias voltage within the range of 10–20V with the interval of...
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| Veröffentlicht in: | Optik (Stuttgart) 2016-08, Vol.127 (16), p.6377-6383 |
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| creator | Desai, H.N. Dhimmar, J.M. Modi, B.P. |
| description | The detailed analysis of photo-response and photoelectrical properties of thermally deposited Cadmium Telluride (CdTe) thin film has been reported in this paper. The photocurrent of the CdTe thin film was measured as a function of applied bias voltage within the range of 10–20V with the interval of 2V for the intensity of illumination of 30mW/cm2 and 100mW/cm2. The photocurrent at the termination of illumination (Io), probability of escape of an electron from the trap per second (p) and trap depth (Et) have been calculated. Considerable increases in photocurrent were observed in CdTe thin film at high applied bias voltage. Also, the space charge limited conduction (SCLC) parameters of the film were carried out under the dark and illumination environment. For increasing intensity of illumination, the effect of defects in CdTe thin film is minimized. Uniform distribution of localized states density showed from the straight line of plot ln (I/V) versus V. |
| doi_str_mv | 10.1016/j.ijleo.2016.04.109 |
| format | Article |
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The photocurrent of the CdTe thin film was measured as a function of applied bias voltage within the range of 10–20V with the interval of 2V for the intensity of illumination of 30mW/cm2 and 100mW/cm2. The photocurrent at the termination of illumination (Io), probability of escape of an electron from the trap per second (p) and trap depth (Et) have been calculated. Considerable increases in photocurrent were observed in CdTe thin film at high applied bias voltage. Also, the space charge limited conduction (SCLC) parameters of the film were carried out under the dark and illumination environment. For increasing intensity of illumination, the effect of defects in CdTe thin film is minimized. Uniform distribution of localized states density showed from the straight line of plot ln (I/V) versus V.</description><identifier>ISSN: 0030-4026</identifier><identifier>EISSN: 1618-1336</identifier><identifier>DOI: 10.1016/j.ijleo.2016.04.109</identifier><language>eng</language><publisher>Elsevier GmbH</publisher><subject>Cadmium ; Cadmium tellurides ; CdTe thin film ; Electric potential ; Illumination ; Intermetallics ; Photo-response properties ; Photocurrent ; Photoelectric effect ; Photoelectrical properties ; SCLC mechanism ; Thin films ; Uniform distribution of localized states density</subject><ispartof>Optik (Stuttgart), 2016-08, Vol.127 (16), p.6377-6383</ispartof><rights>2016</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c336t-ea8bc1d4e372c0974a190f3bb15941d3e3a13b75cd7a36c425bd612f332359a03</citedby><cites>FETCH-LOGICAL-c336t-ea8bc1d4e372c0974a190f3bb15941d3e3a13b75cd7a36c425bd612f332359a03</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.ijleo.2016.04.109$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3541,27915,27916,45986</link.rule.ids></links><search><creatorcontrib>Desai, H.N.</creatorcontrib><creatorcontrib>Dhimmar, J.M.</creatorcontrib><creatorcontrib>Modi, B.P.</creatorcontrib><title>A Study of Photo-response and Photoelectrical properties of Cadmium Telluride Thin Film</title><title>Optik (Stuttgart)</title><description>The detailed analysis of photo-response and photoelectrical properties of thermally deposited Cadmium Telluride (CdTe) thin film has been reported in this paper. The photocurrent of the CdTe thin film was measured as a function of applied bias voltage within the range of 10–20V with the interval of 2V for the intensity of illumination of 30mW/cm2 and 100mW/cm2. The photocurrent at the termination of illumination (Io), probability of escape of an electron from the trap per second (p) and trap depth (Et) have been calculated. Considerable increases in photocurrent were observed in CdTe thin film at high applied bias voltage. Also, the space charge limited conduction (SCLC) parameters of the film were carried out under the dark and illumination environment. For increasing intensity of illumination, the effect of defects in CdTe thin film is minimized. Uniform distribution of localized states density showed from the straight line of plot ln (I/V) versus V.</description><subject>Cadmium</subject><subject>Cadmium tellurides</subject><subject>CdTe thin film</subject><subject>Electric potential</subject><subject>Illumination</subject><subject>Intermetallics</subject><subject>Photo-response properties</subject><subject>Photocurrent</subject><subject>Photoelectric effect</subject><subject>Photoelectrical properties</subject><subject>SCLC mechanism</subject><subject>Thin films</subject><subject>Uniform distribution of localized states density</subject><issn>0030-4026</issn><issn>1618-1336</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNp9kEFLxDAQhYMouK7-Ai89emmdNG3THjwsi6vCgoIrHkOaTNmUtlmTVth_b9Z69jTM473hzUfILYWEAi3u28S0HdokDUsCWRCrM7KgBS1jylhxThYADOIM0uKSXHnfAgDnwBfkcxW9j5M-RraJ3vZ2tLFDf7CDx0gOepawQzU6o2QXHZw9oBsN-lNgLXVvpj7aYddNzmiMdnszRBvT9dfkopGdx5u_uSQfm8fd-jnevj69rFfbWIVeY4yyrBXVGTKeKqh4JmkFDatrmlcZ1QyZpKzmudJcskJlaV7rgqYNYynLKwlsSe7mu6HZ14R-FL3xKvSRA9rJC1qmeVYCpTxY2WxVznrvsBEHZ3rpjoKCOGEUrfjFKE4YBWRBrELqYU5h-OLboBNeGRwUauMCFqGt-Tf_A0KxfEs</recordid><startdate>20160801</startdate><enddate>20160801</enddate><creator>Desai, H.N.</creator><creator>Dhimmar, J.M.</creator><creator>Modi, B.P.</creator><general>Elsevier GmbH</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20160801</creationdate><title>A Study of Photo-response and Photoelectrical properties of Cadmium Telluride Thin Film</title><author>Desai, H.N. ; Dhimmar, J.M. ; Modi, B.P.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c336t-ea8bc1d4e372c0974a190f3bb15941d3e3a13b75cd7a36c425bd612f332359a03</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>Cadmium</topic><topic>Cadmium tellurides</topic><topic>CdTe thin film</topic><topic>Electric potential</topic><topic>Illumination</topic><topic>Intermetallics</topic><topic>Photo-response properties</topic><topic>Photocurrent</topic><topic>Photoelectric effect</topic><topic>Photoelectrical properties</topic><topic>SCLC mechanism</topic><topic>Thin films</topic><topic>Uniform distribution of localized states density</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Desai, H.N.</creatorcontrib><creatorcontrib>Dhimmar, J.M.</creatorcontrib><creatorcontrib>Modi, B.P.</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Optik (Stuttgart)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Desai, H.N.</au><au>Dhimmar, J.M.</au><au>Modi, B.P.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A Study of Photo-response and Photoelectrical properties of Cadmium Telluride Thin Film</atitle><jtitle>Optik (Stuttgart)</jtitle><date>2016-08-01</date><risdate>2016</risdate><volume>127</volume><issue>16</issue><spage>6377</spage><epage>6383</epage><pages>6377-6383</pages><issn>0030-4026</issn><eissn>1618-1336</eissn><abstract>The detailed analysis of photo-response and photoelectrical properties of thermally deposited Cadmium Telluride (CdTe) thin film has been reported in this paper. The photocurrent of the CdTe thin film was measured as a function of applied bias voltage within the range of 10–20V with the interval of 2V for the intensity of illumination of 30mW/cm2 and 100mW/cm2. The photocurrent at the termination of illumination (Io), probability of escape of an electron from the trap per second (p) and trap depth (Et) have been calculated. Considerable increases in photocurrent were observed in CdTe thin film at high applied bias voltage. Also, the space charge limited conduction (SCLC) parameters of the film were carried out under the dark and illumination environment. For increasing intensity of illumination, the effect of defects in CdTe thin film is minimized. Uniform distribution of localized states density showed from the straight line of plot ln (I/V) versus V.</abstract><pub>Elsevier GmbH</pub><doi>10.1016/j.ijleo.2016.04.109</doi><tpages>7</tpages></addata></record> |
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| subjects | Cadmium Cadmium tellurides CdTe thin film Electric potential Illumination Intermetallics Photo-response properties Photocurrent Photoelectric effect Photoelectrical properties SCLC mechanism Thin films Uniform distribution of localized states density |
| title | A Study of Photo-response and Photoelectrical properties of Cadmium Telluride Thin Film |
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