Transition metal dichalcogenide and hexagonal boron nitride heterostructures grown by molecular beam epitaxy

Heterostructures coupling transition metal dichalcogenides (TMDs) and insulating hexagonal boron nitride (h-BN) were grown by molecular beam epitaxy (MBE) demonstrating the unique opportunities for fabricating all 2D heterostructures with the desired band alignments for novel nanoelectronic devices....

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Veröffentlicht in:	Microelectronic engineering 2015-11, Vol.147, p.306-309
Hauptverfasser:	Barton, A.T., Yue, R., Anwar, S., Zhu, H., Peng, X., McDonnell, S., Lu, N., Addou, R., Colombo, L., Kim, M.J., Wallace, R.M., Hinkle, C.L.
Format:	Artikel
Sprache:	eng
Schlagworte:	Boron nitride h-BN Heterostructure Heterostructures HfSe2 MBE Molecular beam epitaxy Scanning tunneling microscopy TMD Transition metals Transmission electron microscopy Tunnel FET van der Waals epitaxy X-ray photoelectron spectroscopy X-rays
Online-Zugang:	Volltext
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