Stimulated emission and lasing in Cu(In,Ga)Se sub(2) thin films
Stimulated emission and lasing in Cu(In,Ga)Se sub(2) thin films have been demonstrated at a temperature of 20 K using excitation by a nanosecond pulsed N sub(2) laser with power densities in the range from 2 to 100 kW cm super(-2). Sharp narrowing of the photoluminescence band, superlinear dependenc...
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Veröffentlicht in: | Journal of physics. D, Applied physics Applied physics, 2016-03, Vol.49 (9), p.95106-95110 |
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container_title | Journal of physics. D, Applied physics |
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creator | Svitsiankou, I E Pavlovskii, V N Lutsenko, E V Yablonskii, G P Mudryi, A V Zhivulko, V D Yakushev, M V Martin, R W |
description | Stimulated emission and lasing in Cu(In,Ga)Se sub(2) thin films have been demonstrated at a temperature of 20 K using excitation by a nanosecond pulsed N sub(2) laser with power densities in the range from 2 to 100 kW cm super(-2). Sharp narrowing of the photoluminescence band, superlinear dependence of its intensity on excitation laser power, as well as stabilization of the spectral position and of the full-width at half-maximum of the band were observed in the films at increasing excitation intensity. The stimulated emission threshold was determined to be 20 kW cm super(-2). A gain value of 94 cm super(-1) has been estimated using the variable stripe length method. Several sharp laser modes near 1.13 eV were observed above the laser threshold of I sub(thr) ~ 50 kW cm super(-2). |
doi_str_mv | 10.1088/0022-3727/49/9/095106 |
format | Article |
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Sharp narrowing of the photoluminescence band, superlinear dependence of its intensity on excitation laser power, as well as stabilization of the spectral position and of the full-width at half-maximum of the band were observed in the films at increasing excitation intensity. The stimulated emission threshold was determined to be 20 kW cm super(-2). A gain value of 94 cm super(-1) has been estimated using the variable stripe length method. Several sharp laser modes near 1.13 eV were observed above the laser threshold of I sub(thr) ~ 50 kW cm super(-2).</description><identifier>ISSN: 0022-3727</identifier><identifier>EISSN: 1361-6463</identifier><identifier>DOI: 10.1088/0022-3727/49/9/095106</identifier><language>eng</language><subject>Band spectra ; Excitation ; Lasers ; Lasing ; Spectra ; Stimulated emission ; Thin films ; Thresholds</subject><ispartof>Journal of physics. 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D, Applied physics</title><description>Stimulated emission and lasing in Cu(In,Ga)Se sub(2) thin films have been demonstrated at a temperature of 20 K using excitation by a nanosecond pulsed N sub(2) laser with power densities in the range from 2 to 100 kW cm super(-2). Sharp narrowing of the photoluminescence band, superlinear dependence of its intensity on excitation laser power, as well as stabilization of the spectral position and of the full-width at half-maximum of the band were observed in the films at increasing excitation intensity. The stimulated emission threshold was determined to be 20 kW cm super(-2). A gain value of 94 cm super(-1) has been estimated using the variable stripe length method. Several sharp laser modes near 1.13 eV were observed above the laser threshold of I sub(thr) ~ 50 kW cm super(-2).</description><subject>Band spectra</subject><subject>Excitation</subject><subject>Lasers</subject><subject>Lasing</subject><subject>Spectra</subject><subject>Stimulated emission</subject><subject>Thin films</subject><subject>Thresholds</subject><issn>0022-3727</issn><issn>1361-6463</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNqVjLsKwjAUQIMoWB-fIGRswdqbtE3TyUF8zXWXqKlG0lS9zf_rIO5OBw6HQ8iMwYKBlAkA53Fa8CLJyqRMoMwZiB4JWCpYLDKR9knwa4ZkhHgHgFxIFpBl1ZnGW9XpC9WNQTSto8pdqFVo3JUaR1c-3Lv5VkWVpuhPIY9od_v42tgGJ2RQK4t6-uWYhJv1YbWLH6_26TV2x8_0rK1VTrcej0zyPBNZwWX6R_oGrdZCOw</recordid><startdate>20160301</startdate><enddate>20160301</enddate><creator>Svitsiankou, I E</creator><creator>Pavlovskii, V N</creator><creator>Lutsenko, E V</creator><creator>Yablonskii, G P</creator><creator>Mudryi, A V</creator><creator>Zhivulko, V D</creator><creator>Yakushev, M V</creator><creator>Martin, R W</creator><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20160301</creationdate><title>Stimulated emission and lasing in Cu(In,Ga)Se sub(2) thin films</title><author>Svitsiankou, I E ; Pavlovskii, V N ; Lutsenko, E V ; Yablonskii, G P ; Mudryi, A V ; Zhivulko, V D ; Yakushev, M V ; Martin, R W</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-proquest_miscellaneous_18254647283</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>Band spectra</topic><topic>Excitation</topic><topic>Lasers</topic><topic>Lasing</topic><topic>Spectra</topic><topic>Stimulated emission</topic><topic>Thin films</topic><topic>Thresholds</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Svitsiankou, I E</creatorcontrib><creatorcontrib>Pavlovskii, V N</creatorcontrib><creatorcontrib>Lutsenko, E V</creatorcontrib><creatorcontrib>Yablonskii, G P</creatorcontrib><creatorcontrib>Mudryi, A V</creatorcontrib><creatorcontrib>Zhivulko, V D</creatorcontrib><creatorcontrib>Yakushev, M V</creatorcontrib><creatorcontrib>Martin, R W</creatorcontrib><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of physics. D, Applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Svitsiankou, I E</au><au>Pavlovskii, V N</au><au>Lutsenko, E V</au><au>Yablonskii, G P</au><au>Mudryi, A V</au><au>Zhivulko, V D</au><au>Yakushev, M V</au><au>Martin, R W</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Stimulated emission and lasing in Cu(In,Ga)Se sub(2) thin films</atitle><jtitle>Journal of physics. D, Applied physics</jtitle><date>2016-03-01</date><risdate>2016</risdate><volume>49</volume><issue>9</issue><spage>95106</spage><epage>95110</epage><pages>95106-95110</pages><issn>0022-3727</issn><eissn>1361-6463</eissn><abstract>Stimulated emission and lasing in Cu(In,Ga)Se sub(2) thin films have been demonstrated at a temperature of 20 K using excitation by a nanosecond pulsed N sub(2) laser with power densities in the range from 2 to 100 kW cm super(-2). Sharp narrowing of the photoluminescence band, superlinear dependence of its intensity on excitation laser power, as well as stabilization of the spectral position and of the full-width at half-maximum of the band were observed in the films at increasing excitation intensity. The stimulated emission threshold was determined to be 20 kW cm super(-2). A gain value of 94 cm super(-1) has been estimated using the variable stripe length method. Several sharp laser modes near 1.13 eV were observed above the laser threshold of I sub(thr) ~ 50 kW cm super(-2).</abstract><doi>10.1088/0022-3727/49/9/095106</doi></addata></record> |
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subjects | Band spectra Excitation Lasers Lasing Spectra Stimulated emission Thin films Thresholds |
title | Stimulated emission and lasing in Cu(In,Ga)Se sub(2) thin films |
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