Evaluation of a ferroelectric tunnel junction by ultraviolet-visible absorption using a removable liquid electrode
Ferroelectric memristors offer a significant alternative to their redox-based analogs in resistive random access memory because a ferroelectric tunnel junction (FTJ) exhibits a memristive effect that induces resistive switching (RS) regardless of the operating current level. This RS results from a c...
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| Veröffentlicht in: | Nanotechnology 2016-05, Vol.27 (21), p.215704-215704 |
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| container_issue | 21 |
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| container_title | Nanotechnology |
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| creator | Lee, Hong-Sub Kang, Kyung-Mun Yeom, Geun Young Park, Hyung-Ho |
| description | Ferroelectric memristors offer a significant alternative to their redox-based analogs in resistive random access memory because a ferroelectric tunnel junction (FTJ) exhibits a memristive effect that induces resistive switching (RS) regardless of the operating current level. This RS results from a change in the ferroelectric polarization direction, allowing the FTJ to overcome the restriction encountered in redox-based memristors. Herein, the memristive effect of an FTJ was investigated by ultraviolet-visible (UV-Vis) absorption spectroscopy using a removable mercury (Hg) top electrode (TE), BaTiO3 (BTO) ferroelectric tunnel layer, La0.7Sr0.3MnO3 (LSMO) semiconductor bottom electrode, and wide-bandgap quartz (100) single-crystal substrate to determine the low-resistance state (LRS) and high-resistance state (HRS) of the FTJ. A BTO (110) LSMO (110) polycrystal memristor involving a Hg TE showed a small memristive effect (switching ratio). This effect decreased with increasing read voltage because of a small potential barrier height. The LRS and HRS of the FTJ showed quasi-similar UV-Vis absorption spectra, consistent with the small energy difference between the valence-band maximum of BTO and Fermi level of LSMO near the interface between the LRS and HRS. This energy difference stemmed from the ferroelectric polarization and charge-screening effect of LSMO based on an electrostatic model of the FTJ. |
| doi_str_mv | 10.1088/0957-4484/27/21/215704 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_iop_j</sourceid><recordid>TN_cdi_proquest_miscellaneous_1825463180</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1783920704</sourcerecordid><originalsourceid>FETCH-LOGICAL-c368t-8ddd4d261acf5795a076d15b6202f0d47c3b158339f1b85828fb90b7cd89178f3</originalsourceid><addsrcrecordid>eNqFkUtLHTEYhoNU9FT9CzLLdjGeJDO5zFLEGwjdtOuQq-SQk4zJ5ID_vjOOCoWCEMgiz_cmeV4ALhG8QpDzLRwIa_ue91vMthjNizDYH4EN6ihqKcH8G9h8Qqfgeyk7CBHiGJ2AU8wgZ5T1G5BvDzJUOfkUm-Qa2Tibc7LB6il73Uw1RhuaXY36DVGvTQ1Tlgefgp3agy9eBdtIVVIe34hafHyec7Ldp4NcDoN_qd40a2Yy9hwcOxmKvXjfz8Cfu9vfNw_t06_7x5vrp1Z3lE8tN8b0BlMktSNsIBIyahBRFEPsoOmZ7hQivOsGhxQnHHOnBqiYNnxAjLvuDPxYc8ecXqotk9j7om0IMtpUi5hdkJ52iMOvUca7AcPZ8IzSFdU5lZKtE2P2e5lfBYJiqUYs1sViXWAmMBJrNfPg5fsdVe2t-Rz76GIGfq6AT6PYpZrjbEdEGdM_QWI0y9_wf9gvXvAX1x2n6A</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1783920704</pqid></control><display><type>article</type><title>Evaluation of a ferroelectric tunnel junction by ultraviolet-visible absorption using a removable liquid electrode</title><source>Institute of Physics Journals</source><creator>Lee, Hong-Sub ; Kang, Kyung-Mun ; Yeom, Geun Young ; Park, Hyung-Ho</creator><creatorcontrib>Lee, Hong-Sub ; Kang, Kyung-Mun ; Yeom, Geun Young ; Park, Hyung-Ho</creatorcontrib><description>Ferroelectric memristors offer a significant alternative to their redox-based analogs in resistive random access memory because a ferroelectric tunnel junction (FTJ) exhibits a memristive effect that induces resistive switching (RS) regardless of the operating current level. This RS results from a change in the ferroelectric polarization direction, allowing the FTJ to overcome the restriction encountered in redox-based memristors. Herein, the memristive effect of an FTJ was investigated by ultraviolet-visible (UV-Vis) absorption spectroscopy using a removable mercury (Hg) top electrode (TE), BaTiO3 (BTO) ferroelectric tunnel layer, La0.7Sr0.3MnO3 (LSMO) semiconductor bottom electrode, and wide-bandgap quartz (100) single-crystal substrate to determine the low-resistance state (LRS) and high-resistance state (HRS) of the FTJ. A BTO (110) LSMO (110) polycrystal memristor involving a Hg TE showed a small memristive effect (switching ratio). This effect decreased with increasing read voltage because of a small potential barrier height. The LRS and HRS of the FTJ showed quasi-similar UV-Vis absorption spectra, consistent with the small energy difference between the valence-band maximum of BTO and Fermi level of LSMO near the interface between the LRS and HRS. This energy difference stemmed from the ferroelectric polarization and charge-screening effect of LSMO based on an electrostatic model of the FTJ.</description><identifier>ISSN: 0957-4484</identifier><identifier>EISSN: 1361-6528</identifier><identifier>DOI: 10.1088/0957-4484/27/21/215704</identifier><identifier>PMID: 27087674</identifier><identifier>CODEN: NNOTER</identifier><language>eng</language><publisher>England: IOP Publishing</publisher><subject>Electrodes ; electrostatic model ; Ferroelectric materials ; ferroelectric tunnel junction ; Ferroelectricity ; Memory devices ; memristor ; Mercury (metal) ; Polarization ; resistive random access memory ; Resistors ; Semiconductors ; ultraviolet-visible absorption</subject><ispartof>Nanotechnology, 2016-05, Vol.27 (21), p.215704-215704</ispartof><rights>2016 IOP Publishing Ltd</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.1088/0957-4484/27/21/215704/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>314,776,780,27901,27902,53821,53868</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/27087674$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Lee, Hong-Sub</creatorcontrib><creatorcontrib>Kang, Kyung-Mun</creatorcontrib><creatorcontrib>Yeom, Geun Young</creatorcontrib><creatorcontrib>Park, Hyung-Ho</creatorcontrib><title>Evaluation of a ferroelectric tunnel junction by ultraviolet-visible absorption using a removable liquid electrode</title><title>Nanotechnology</title><addtitle>NANO</addtitle><addtitle>Nanotechnology</addtitle><description>Ferroelectric memristors offer a significant alternative to their redox-based analogs in resistive random access memory because a ferroelectric tunnel junction (FTJ) exhibits a memristive effect that induces resistive switching (RS) regardless of the operating current level. This RS results from a change in the ferroelectric polarization direction, allowing the FTJ to overcome the restriction encountered in redox-based memristors. Herein, the memristive effect of an FTJ was investigated by ultraviolet-visible (UV-Vis) absorption spectroscopy using a removable mercury (Hg) top electrode (TE), BaTiO3 (BTO) ferroelectric tunnel layer, La0.7Sr0.3MnO3 (LSMO) semiconductor bottom electrode, and wide-bandgap quartz (100) single-crystal substrate to determine the low-resistance state (LRS) and high-resistance state (HRS) of the FTJ. A BTO (110) LSMO (110) polycrystal memristor involving a Hg TE showed a small memristive effect (switching ratio). This effect decreased with increasing read voltage because of a small potential barrier height. The LRS and HRS of the FTJ showed quasi-similar UV-Vis absorption spectra, consistent with the small energy difference between the valence-band maximum of BTO and Fermi level of LSMO near the interface between the LRS and HRS. This energy difference stemmed from the ferroelectric polarization and charge-screening effect of LSMO based on an electrostatic model of the FTJ.</description><subject>Electrodes</subject><subject>electrostatic model</subject><subject>Ferroelectric materials</subject><subject>ferroelectric tunnel junction</subject><subject>Ferroelectricity</subject><subject>Memory devices</subject><subject>memristor</subject><subject>Mercury (metal)</subject><subject>Polarization</subject><subject>resistive random access memory</subject><subject>Resistors</subject><subject>Semiconductors</subject><subject>ultraviolet-visible absorption</subject><issn>0957-4484</issn><issn>1361-6528</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNqFkUtLHTEYhoNU9FT9CzLLdjGeJDO5zFLEGwjdtOuQq-SQk4zJ5ID_vjOOCoWCEMgiz_cmeV4ALhG8QpDzLRwIa_ue91vMthjNizDYH4EN6ihqKcH8G9h8Qqfgeyk7CBHiGJ2AU8wgZ5T1G5BvDzJUOfkUm-Qa2Tibc7LB6il73Uw1RhuaXY36DVGvTQ1Tlgefgp3agy9eBdtIVVIe34hafHyec7Ldp4NcDoN_qd40a2Yy9hwcOxmKvXjfz8Cfu9vfNw_t06_7x5vrp1Z3lE8tN8b0BlMktSNsIBIyahBRFEPsoOmZ7hQivOsGhxQnHHOnBqiYNnxAjLvuDPxYc8ecXqotk9j7om0IMtpUi5hdkJ52iMOvUca7AcPZ8IzSFdU5lZKtE2P2e5lfBYJiqUYs1sViXWAmMBJrNfPg5fsdVe2t-Rz76GIGfq6AT6PYpZrjbEdEGdM_QWI0y9_wf9gvXvAX1x2n6A</recordid><startdate>20160527</startdate><enddate>20160527</enddate><creator>Lee, Hong-Sub</creator><creator>Kang, Kyung-Mun</creator><creator>Yeom, Geun Young</creator><creator>Park, Hyung-Ho</creator><general>IOP Publishing</general><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>F28</scope><scope>FR3</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20160527</creationdate><title>Evaluation of a ferroelectric tunnel junction by ultraviolet-visible absorption using a removable liquid electrode</title><author>Lee, Hong-Sub ; Kang, Kyung-Mun ; Yeom, Geun Young ; Park, Hyung-Ho</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c368t-8ddd4d261acf5795a076d15b6202f0d47c3b158339f1b85828fb90b7cd89178f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>Electrodes</topic><topic>electrostatic model</topic><topic>Ferroelectric materials</topic><topic>ferroelectric tunnel junction</topic><topic>Ferroelectricity</topic><topic>Memory devices</topic><topic>memristor</topic><topic>Mercury (metal)</topic><topic>Polarization</topic><topic>resistive random access memory</topic><topic>Resistors</topic><topic>Semiconductors</topic><topic>ultraviolet-visible absorption</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lee, Hong-Sub</creatorcontrib><creatorcontrib>Kang, Kyung-Mun</creatorcontrib><creatorcontrib>Yeom, Geun Young</creatorcontrib><creatorcontrib>Park, Hyung-Ho</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Nanotechnology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lee, Hong-Sub</au><au>Kang, Kyung-Mun</au><au>Yeom, Geun Young</au><au>Park, Hyung-Ho</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Evaluation of a ferroelectric tunnel junction by ultraviolet-visible absorption using a removable liquid electrode</atitle><jtitle>Nanotechnology</jtitle><stitle>NANO</stitle><addtitle>Nanotechnology</addtitle><date>2016-05-27</date><risdate>2016</risdate><volume>27</volume><issue>21</issue><spage>215704</spage><epage>215704</epage><pages>215704-215704</pages><issn>0957-4484</issn><eissn>1361-6528</eissn><coden>NNOTER</coden><abstract>Ferroelectric memristors offer a significant alternative to their redox-based analogs in resistive random access memory because a ferroelectric tunnel junction (FTJ) exhibits a memristive effect that induces resistive switching (RS) regardless of the operating current level. This RS results from a change in the ferroelectric polarization direction, allowing the FTJ to overcome the restriction encountered in redox-based memristors. Herein, the memristive effect of an FTJ was investigated by ultraviolet-visible (UV-Vis) absorption spectroscopy using a removable mercury (Hg) top electrode (TE), BaTiO3 (BTO) ferroelectric tunnel layer, La0.7Sr0.3MnO3 (LSMO) semiconductor bottom electrode, and wide-bandgap quartz (100) single-crystal substrate to determine the low-resistance state (LRS) and high-resistance state (HRS) of the FTJ. A BTO (110) LSMO (110) polycrystal memristor involving a Hg TE showed a small memristive effect (switching ratio). This effect decreased with increasing read voltage because of a small potential barrier height. The LRS and HRS of the FTJ showed quasi-similar UV-Vis absorption spectra, consistent with the small energy difference between the valence-band maximum of BTO and Fermi level of LSMO near the interface between the LRS and HRS. This energy difference stemmed from the ferroelectric polarization and charge-screening effect of LSMO based on an electrostatic model of the FTJ.</abstract><cop>England</cop><pub>IOP Publishing</pub><pmid>27087674</pmid><doi>10.1088/0957-4484/27/21/215704</doi><tpages>6</tpages></addata></record> |
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| source | Institute of Physics Journals |
| subjects | Electrodes electrostatic model Ferroelectric materials ferroelectric tunnel junction Ferroelectricity Memory devices memristor Mercury (metal) Polarization resistive random access memory Resistors Semiconductors ultraviolet-visible absorption |
| title | Evaluation of a ferroelectric tunnel junction by ultraviolet-visible absorption using a removable liquid electrode |
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