Graphene-based half-metal and spin-semiconductor for spintronic applications
In this letter we propose a strategy to make graphene become a half-metal or spin-semiconductor by combining the magnetic proximity effects and sublattice symmetry breaking in graphone/graphene and graphone/graphene/BN heterostructures. Exchange interactions lift the spin degeneracy and sublattice s...
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| Veröffentlicht in: | Journal of physics. Condensed matter 2016-03, Vol.28 (12), p.126004-126004 |
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| container_end_page | 126004 |
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| container_issue | 12 |
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| container_title | Journal of physics. Condensed matter |
| container_volume | 28 |
| creator | Qi, Jingshan Chen, Xiaofang Hu, Kaige Feng, Ji |
| description | In this letter we propose a strategy to make graphene become a half-metal or spin-semiconductor by combining the magnetic proximity effects and sublattice symmetry breaking in graphone/graphene and graphone/graphene/BN heterostructures. Exchange interactions lift the spin degeneracy and sublattice symmetry breaking opens a band gap in graphene. More interestingly, the gap opening depends on the spin direction and the competition between the sublattice asymmetry and exchange field determines the system is a half-metal or a spin-semiconductor. By first-principles calculations and a low-energy effective model analysis, we elucidate the underlying physical mechanism of spin-dependent gap opening and spin degeneracy splitting. This offers an alternative practical platform for graphene-based spintronics. |
| doi_str_mv | 10.1088/0953-8984/28/12/126004 |
| format | Article |
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Exchange interactions lift the spin degeneracy and sublattice symmetry breaking opens a band gap in graphene. More interestingly, the gap opening depends on the spin direction and the competition between the sublattice asymmetry and exchange field determines the system is a half-metal or a spin-semiconductor. By first-principles calculations and a low-energy effective model analysis, we elucidate the underlying physical mechanism of spin-dependent gap opening and spin degeneracy splitting. 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This offers an alternative practical platform for graphene-based spintronics.</description><subject>Asymmetry</subject><subject>Broken symmetry</subject><subject>Condensed matter</subject><subject>Exchange</subject><subject>Graphene</subject><subject>heterostructure</subject><subject>magnetism</subject><subject>Platforms</subject><subject>Spintronics</subject><subject>Strategy</subject><issn>0953-8984</issn><issn>1361-648X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNqFkFFLwzAQx4Mobk6_wuibvtTlLm2SPsrQKQx8UfAtpGnKOtqmJu2D396WzYEgCDkCx-_-x_0IWQK9ByrlimYpi2UmkxXKFeD4OKXJGZkD4xDzRH6ck_kJmpGrEPZ0JCRLLskMecaYEGxOthuvu51tbZzrYItop-sybmyv60i3RRS6qo2DbSrj2mIwvfNROdbU7r1rKxPprqsro_vKteGaXJS6Dvbm-C_I-9Pj2_o53r5uXtYP29gkkPWxyBE4Qm6xzFMJGbMckYHJgFMuKQiWQlpog1liBUpTIkJS6JznuuAllmxB7g65nXefgw29aqpgbF3r1rohKJCYJqngXPyPCjGGS8HkiPIDarwLwdtSdb5qtP9SQNUkXU0-1eRToVSA6iB9HFwedwx5Y4vT2I_lEbg9AJXr1N4Nvh3tKNP8ilFdMV2Gf5D_7P8G2PqYHQ</recordid><startdate>20160331</startdate><enddate>20160331</enddate><creator>Qi, Jingshan</creator><creator>Chen, Xiaofang</creator><creator>Hu, Kaige</creator><creator>Feng, Ji</creator><general>IOP Publishing</general><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20160331</creationdate><title>Graphene-based half-metal and spin-semiconductor for spintronic applications</title><author>Qi, Jingshan ; Chen, Xiaofang ; Hu, Kaige ; Feng, Ji</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c419t-7b21621be2fb58193e62231c9160680173515dac294e728cf2214dab6bad6f2f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>Asymmetry</topic><topic>Broken symmetry</topic><topic>Condensed matter</topic><topic>Exchange</topic><topic>Graphene</topic><topic>heterostructure</topic><topic>magnetism</topic><topic>Platforms</topic><topic>Spintronics</topic><topic>Strategy</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Qi, Jingshan</creatorcontrib><creatorcontrib>Chen, Xiaofang</creatorcontrib><creatorcontrib>Hu, Kaige</creatorcontrib><creatorcontrib>Feng, Ji</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of physics. 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| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | Asymmetry Broken symmetry Condensed matter Exchange Graphene heterostructure magnetism Platforms Spintronics Strategy |
| title | Graphene-based half-metal and spin-semiconductor for spintronic applications |
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