Role of silicon dangling bonds in the electronic properties of epitaxial graphene on silicon carbide

In this paper, we study the electronic properties of epitaxial graphene (EG) on silicon carbide by means of ab initio calculations based on the local spin density approximation + U method taking into account the Coulomb interaction between Si localized electrons. We show that this interaction is not...

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Veröffentlicht in:	Nanotechnology 2016-03, Vol.27 (12), p.125705-125705
Hauptverfasser:	Ridene, Mohamed, Kha, Calvin S, Flipse, Cees F J
Format:	Artikel
Sprache:	eng
Schlagworte:	Approximation Carbon density functional theory Electronic properties epiaxial graphene Epitaxy Graphene Mathematical analysis Silicon Silicon carbide silicon dangling bond
Online-Zugang:	Volltext
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