Role of silicon dangling bonds in the electronic properties of epitaxial graphene on silicon carbide
In this paper, we study the electronic properties of epitaxial graphene (EG) on silicon carbide by means of ab initio calculations based on the local spin density approximation + U method taking into account the Coulomb interaction between Si localized electrons. We show that this interaction is not...
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| Veröffentlicht in: | Nanotechnology 2016-03, Vol.27 (12), p.125705-125705 |
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| container_title | Nanotechnology |
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| creator | Ridene, Mohamed Kha, Calvin S Flipse, Cees F J |
| description | In this paper, we study the electronic properties of epitaxial graphene (EG) on silicon carbide by means of ab initio calculations based on the local spin density approximation + U method taking into account the Coulomb interaction between Si localized electrons. We show that this interaction is not completely suppressed but is screened by carbon layers grown on-top of silicon carbide. This finding leads to a good qualitative understanding of the experimental results reported on EG on silicon carbide. Our results highlight the presence of the Si localized states and might explain the anomalous Hanle curve and the high values of spin relaxation time in EG. |
| doi_str_mv | 10.1088/0957-4484/27/12/125705 |
| format | Article |
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Our results highlight the presence of the Si localized states and might explain the anomalous Hanle curve and the high values of spin relaxation time in EG.</description><subject>Approximation</subject><subject>Carbon</subject><subject>density functional theory</subject><subject>Electronic properties</subject><subject>epiaxial graphene</subject><subject>Epitaxy</subject><subject>Graphene</subject><subject>Mathematical analysis</subject><subject>Silicon</subject><subject>Silicon carbide</subject><subject>silicon dangling bond</subject><issn>0957-4484</issn><issn>1361-6528</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNqFkVtrFEEQhRtRzCb6F0I_6sO43TV9m0cJRoWAIPrc9KVm02G2e-yeBf33zrJxQQgECurlO6eqThFyzdkHzozZskHqTggjtqC3HNaSmskXZMN7xTslwbwkmzN0QS5be2CMcwP8NbkAZQYOQmxI_F4mpGWkLU0plEyjy7sp5R31JcdGU6bLPVKcMCy15BToXMuMdUnYjjKc0-J-JzfRXXXzPebVLJ_Ngqs-RXxDXo1uavj2sV-Rn7efftx86e6-ff568_GuCwL40vkYTIxKst6HiMoAOFCOwzDG2CuU3isNYkDwoN0gZT_wXpsxeOE5RMT-irw7-a47_jpgW-w-tYDT5DKWQ7Pr9VJIqQd4HtVKMzUMjK2oOqGhltYqjnauae_qH8uZPT7DHnO2x5wtaMvBnp6xCq8fZxz8HuNZ9i_9FYATkMpsH8qh5jWd513fPyHKLpf_ODvHsf8LxsmiYQ</recordid><startdate>20160329</startdate><enddate>20160329</enddate><creator>Ridene, Mohamed</creator><creator>Kha, Calvin S</creator><creator>Flipse, Cees F J</creator><general>IOP Publishing</general><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>F28</scope><scope>FR3</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20160329</creationdate><title>Role of silicon dangling bonds in the electronic properties of epitaxial graphene on silicon carbide</title><author>Ridene, Mohamed ; Kha, Calvin S ; Flipse, Cees F J</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c421t-bdc8dd6503bcde6822a26a129fdd36e5bb67249e2b27a955391378fcb4b12dee3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>Approximation</topic><topic>Carbon</topic><topic>density functional theory</topic><topic>Electronic properties</topic><topic>epiaxial graphene</topic><topic>Epitaxy</topic><topic>Graphene</topic><topic>Mathematical analysis</topic><topic>Silicon</topic><topic>Silicon carbide</topic><topic>silicon dangling bond</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ridene, Mohamed</creatorcontrib><creatorcontrib>Kha, Calvin S</creatorcontrib><creatorcontrib>Flipse, Cees F J</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Nanotechnology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ridene, Mohamed</au><au>Kha, Calvin S</au><au>Flipse, Cees F J</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Role of silicon dangling bonds in the electronic properties of epitaxial graphene on silicon carbide</atitle><jtitle>Nanotechnology</jtitle><stitle>NANO</stitle><addtitle>Nanotechnology</addtitle><date>2016-03-29</date><risdate>2016</risdate><volume>27</volume><issue>12</issue><spage>125705</spage><epage>125705</epage><pages>125705-125705</pages><issn>0957-4484</issn><eissn>1361-6528</eissn><coden>NNOTER</coden><abstract>In this paper, we study the electronic properties of epitaxial graphene (EG) on silicon carbide by means of ab initio calculations based on the local spin density approximation + U method taking into account the Coulomb interaction between Si localized electrons. 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| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | Approximation Carbon density functional theory Electronic properties epiaxial graphene Epitaxy Graphene Mathematical analysis Silicon Silicon carbide silicon dangling bond |
| title | Role of silicon dangling bonds in the electronic properties of epitaxial graphene on silicon carbide |
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