Effect of supply voltage and body-biasing on single-event transient pulse quenching in bulk fin field-effect-transistor process
Charge sharing is becoming an important topic as the feature size scales down in fin field-effect-transistor (FinFET) technology. However, the studies of charge sharing induced single-event transient (SET) pulse quenching with bulk FinFET are reported seldomly. Using three-dimensional technology com...
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Veröffentlicht in: | Chinese physics B 2016-04, Vol.25 (4), p.495-500 |
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Format: | Artikel |
Sprache: | eng |
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