Effect of supply voltage and body-biasing on single-event transient pulse quenching in bulk fin field-effect-transistor process

Charge sharing is becoming an important topic as the feature size scales down in fin field-effect-transistor (FinFET) technology. However, the studies of charge sharing induced single-event transient (SET) pulse quenching with bulk FinFET are reported seldomly. Using three-dimensional technology com...

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Veröffentlicht in:Chinese physics B 2016-04, Vol.25 (4), p.495-500
1. Verfasser: 于俊庭 陈书明 陈建军 黄鹏程 宋睿强
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Sprache:eng
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