The Influence of High-Power Ion Beams and High-Intensity Short-Pulse Implantation of Ions on the Properties of Ceramic Silicon Carbide
The paper is focused on the study of the structural, electrical and optical characteristics of the ceramic silicon carbide before and after irradiation in the regimes of the high-power ion beams (HPIB) and high-intensity short-pulse implantation (HISPI) of carbon ions. The dominant mechanism of tran...
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| Veröffentlicht in: | IOP conference series. Materials Science and Engineering 2016-02, Vol.110 (1), p.12006-12010 |
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| creator | Kabyshev, A V Konusov, F V Pavlov, S K Remnev, G E |
| description | The paper is focused on the study of the structural, electrical and optical characteristics of the ceramic silicon carbide before and after irradiation in the regimes of the high-power ion beams (HPIB) and high-intensity short-pulse implantation (HISPI) of carbon ions. The dominant mechanism of transport of charge carriers, their type and the energy spectrum of localized states (LS) of defects determining the properties of SiC were established. Electrical and optical characteristics of ceramic before and after irradiation are determined by the biographical and radiation defects whose band gap (BG) energy levels have a continuous energetic distribution. A dominant p-type activation component of conduction with participation of shallow acceptor levels 0.05-0.16 eV is complemented by hopping mechanism of conduction involving the defects LS with a density of 1.2T017-2.4T018 eV-Am-3 distributed near the Fermi level.The effect of radiation defects with deep levels in the BG on properties change dominates after HISPI. A new material with the changed electronic structure and properties is formed in the near surface layer of SiC after the impact of the HPIB. |
| doi_str_mv | 10.1088/1757-899X/110/1/012006 |
| format | Article |
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The dominant mechanism of transport of charge carriers, their type and the energy spectrum of localized states (LS) of defects determining the properties of SiC were established. Electrical and optical characteristics of ceramic before and after irradiation are determined by the biographical and radiation defects whose band gap (BG) energy levels have a continuous energetic distribution. A dominant p-type activation component of conduction with participation of shallow acceptor levels 0.05-0.16 eV is complemented by hopping mechanism of conduction involving the defects LS with a density of 1.2T017-2.4T018 eV-Am-3 distributed near the Fermi level.The effect of radiation defects with deep levels in the BG on properties change dominates after HISPI. A new material with the changed electronic structure and properties is formed in the near surface layer of SiC after the impact of the HPIB.</description><identifier>ISSN: 1757-8981</identifier><identifier>EISSN: 1757-899X</identifier><identifier>DOI: 10.1088/1757-899X/110/1/012006</identifier><language>eng</language><publisher>Bristol: IOP Publishing</publisher><subject>Activation ; Carbon ; Ceramics ; Current carriers ; Defects ; Electronic structure ; Energy gap ; Energy levels ; Energy spectra ; Hopping conduction ; Ion beams ; Ion implantation ; Irradiation ; Optical properties ; Radiation ; Radiation damage ; Radiation effects ; Short pulses ; Silicon carbide ; Surface layers</subject><ispartof>IOP conference series. Materials Science and Engineering, 2016-02, Vol.110 (1), p.12006-12010</ispartof><rights>Published under licence by IOP Publishing Ltd</rights><rights>2016. This work is published under http://creativecommons.org/licenses/by/3.0/ (the “License”). 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| subjects | Activation Carbon Ceramics Current carriers Defects Electronic structure Energy gap Energy levels Energy spectra Hopping conduction Ion beams Ion implantation Irradiation Optical properties Radiation Radiation damage Radiation effects Short pulses Silicon carbide Surface layers |
| title | The Influence of High-Power Ion Beams and High-Intensity Short-Pulse Implantation of Ions on the Properties of Ceramic Silicon Carbide |
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