AlN/GaN high electron mobility transistors on sapphire substrates for Ka band applications

We report the DC and RF characteristics of AlN/GaN high electron mobility transistors（HEMTs） with the gate length of 100 nm on sapphire substrates. The device exhibits a maximum drain current density of 1.29 A/mm and a peak transconductance of 440 m S/mm. A current gain cutoff frequency and a maximu...

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Veröffentlicht in:	Journal of semiconductors 2016-04, Vol.37 (4), p.69-72
1. Verfasser:	宋旭波吕元杰顾国栋王元刚谭鑫周幸叶敦少博徐鹏尹甲运魏碧华冯志红蔡树军
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Schlagworte:	AlN Aluminum nitride Domestic Gallium nitrides GaN HEMT器件 High electron mobility transistors Ka波段 Sapphire Semiconductor devices Semiconductors Substrates 功率密度应用蓝宝石衬底高电子迁移率晶体管
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container_title	Journal of semiconductors
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creator	宋旭波吕元杰顾国栋王元刚谭鑫周幸叶敦少博徐鹏尹甲运魏碧华冯志红蔡树军
description	We report the DC and RF characteristics of AlN/GaN high electron mobility transistors（HEMTs） with the gate length of 100 nm on sapphire substrates. The device exhibits a maximum drain current density of 1.29 A/mm and a peak transconductance of 440 m S/mm. A current gain cutoff frequency and a maximum oscillation frequency of 119 GHz and 155 GHz have been obtained, respectively. Furthermore, the large signal load pull characteristics of the AlN/GaN HEMTs were measured at 29 GHz. An output power density of 429 m W/mm has been demonstrated at a drain bias of 10 V. To the authors＇ best knowledge, this is the earliest demonstration of power density at the Ka band for Al N/Ga N HEMTs in the domestic, and also a high frequency of load-pull measurements for Al N/Ga N HEMTs.
doi_str_mv	10.1088/1674-4926/37/4/044007
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subjects	AlN Aluminum nitride Domestic Gallium nitrides GaN HEMT器件 High electron mobility transistors Ka波段 Sapphire Semiconductor devices Semiconductors Substrates 功率密度应用蓝宝石衬底高电子迁移率晶体管
title	AlN/GaN high electron mobility transistors on sapphire substrates for Ka band applications
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