Effect of pad groove width on slurry mean residence time and slurry utilization efficiency in CMP
This paper studies the effect of pad groove width on slurry mean residence time (MRT) in the pad–wafer interface as well as slurry utilization efficiency (η) during chemical mechanical planarization. Three concentrically grooved pads with different groove widths were tested at different polishing pr...
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Veröffentlicht in: | Microelectronic engineering 2016-05, Vol.157, p.60-63 |
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creator | Mu, Yan Zhuang, Yun Sampurno, Yasa Wei, Xiaomin Ashizawa, Toranosuke Morishima, Hiroyuki Philipossian, Ara |
description | This paper studies the effect of pad groove width on slurry mean residence time (MRT) in the pad–wafer interface as well as slurry utilization efficiency (η) during chemical mechanical planarization. Three concentrically grooved pads with different groove widths were tested at different polishing pressures to experimentally determine the corresponding MRT using the residence time distribution (RTD) technique. Results showed that MRT and η increased significantly when the groove width increased from 300 to 600μm. On the other hand, when the groove width increased further to 900μm, MRT continued to increase while η remained constant. Results also indicated that MRT was reduced at a higher polishing pressure while η did not change significantly with pressure for all three pads.
[Display omitted]
•Residence time distribution method was applied to calculate mean residence time.•Mean residence time increases with the increasing of pad groove width.•Slurry utilization efficiency level off with the increasing of pad groove width. |
doi_str_mv | 10.1016/j.mee.2016.02.035 |
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[Display omitted]
•Residence time distribution method was applied to calculate mean residence time.•Mean residence time increases with the increasing of pad groove width.•Slurry utilization efficiency level off with the increasing of pad groove width.</description><identifier>ISSN: 0167-9317</identifier><identifier>EISSN: 1873-5568</identifier><identifier>DOI: 10.1016/j.mee.2016.02.035</identifier><language>eng</language><publisher>Elsevier B.V</publisher><subject>Chemical mechanical planarization ; Constants ; Grooves ; Mean residence time ; Microelectronics ; Planarization ; Polishing ; Residence time distribution ; Slurries ; Slurry utilization efficiency ; Utilization</subject><ispartof>Microelectronic engineering, 2016-05, Vol.157, p.60-63</ispartof><rights>2016 Elsevier B.V.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c330t-81954b374aa5380fb1bc5d3fdcd5196386df8390051f40b845ea122e0e15a4383</citedby><cites>FETCH-LOGICAL-c330t-81954b374aa5380fb1bc5d3fdcd5196386df8390051f40b845ea122e0e15a4383</cites><orcidid>0000-0002-2273-6196</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.mee.2016.02.035$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3550,27924,27925,45995</link.rule.ids></links><search><creatorcontrib>Mu, Yan</creatorcontrib><creatorcontrib>Zhuang, Yun</creatorcontrib><creatorcontrib>Sampurno, Yasa</creatorcontrib><creatorcontrib>Wei, Xiaomin</creatorcontrib><creatorcontrib>Ashizawa, Toranosuke</creatorcontrib><creatorcontrib>Morishima, Hiroyuki</creatorcontrib><creatorcontrib>Philipossian, Ara</creatorcontrib><title>Effect of pad groove width on slurry mean residence time and slurry utilization efficiency in CMP</title><title>Microelectronic engineering</title><description>This paper studies the effect of pad groove width on slurry mean residence time (MRT) in the pad–wafer interface as well as slurry utilization efficiency (η) during chemical mechanical planarization. Three concentrically grooved pads with different groove widths were tested at different polishing pressures to experimentally determine the corresponding MRT using the residence time distribution (RTD) technique. Results showed that MRT and η increased significantly when the groove width increased from 300 to 600μm. On the other hand, when the groove width increased further to 900μm, MRT continued to increase while η remained constant. Results also indicated that MRT was reduced at a higher polishing pressure while η did not change significantly with pressure for all three pads.
[Display omitted]
•Residence time distribution method was applied to calculate mean residence time.•Mean residence time increases with the increasing of pad groove width.•Slurry utilization efficiency level off with the increasing of pad groove width.</description><subject>Chemical mechanical planarization</subject><subject>Constants</subject><subject>Grooves</subject><subject>Mean residence time</subject><subject>Microelectronics</subject><subject>Planarization</subject><subject>Polishing</subject><subject>Residence time distribution</subject><subject>Slurries</subject><subject>Slurry utilization efficiency</subject><subject>Utilization</subject><issn>0167-9317</issn><issn>1873-5568</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNp9kEtPwzAQhC0EEqXwA7j5yCXBju3EESdUlYdUBAc4W469Bld5FDspKr8eQ-HKaXc1MyvNh9A5JTkltLxc5x1AXqQ1J0VOmDhAMyorlglRykM0S0KV1YxWx-gkxjVJNydyhvTSOTAjHhzeaItfwzBsAX94O77hocexnULY4Q50jwNEb6E3gEffAda9_ZOn0bf-U48-JcA5b3yy7bDv8eLh6RQdOd1GOPudc_Rys3xe3GWrx9v7xfUqM4yRMZO0FrxhFddaMElcQxsjLHPWWEHrksnSOslqQgR1nDSSC9C0KIAAFZozyeboYv93E4b3CeKoOh8NtK3uYZiiorIQnJeJQ7LSvdWEIcYATm2C73TYKUrUN061Vgmn-sapSKESzpS52mcgddh6CCr-1ATrQwKo7OD_SX8BY1l9Ng</recordid><startdate>20160501</startdate><enddate>20160501</enddate><creator>Mu, Yan</creator><creator>Zhuang, Yun</creator><creator>Sampurno, Yasa</creator><creator>Wei, Xiaomin</creator><creator>Ashizawa, Toranosuke</creator><creator>Morishima, Hiroyuki</creator><creator>Philipossian, Ara</creator><general>Elsevier B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-2273-6196</orcidid></search><sort><creationdate>20160501</creationdate><title>Effect of pad groove width on slurry mean residence time and slurry utilization efficiency in CMP</title><author>Mu, Yan ; Zhuang, Yun ; Sampurno, Yasa ; Wei, Xiaomin ; Ashizawa, Toranosuke ; Morishima, Hiroyuki ; Philipossian, Ara</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c330t-81954b374aa5380fb1bc5d3fdcd5196386df8390051f40b845ea122e0e15a4383</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>Chemical mechanical planarization</topic><topic>Constants</topic><topic>Grooves</topic><topic>Mean residence time</topic><topic>Microelectronics</topic><topic>Planarization</topic><topic>Polishing</topic><topic>Residence time distribution</topic><topic>Slurries</topic><topic>Slurry utilization efficiency</topic><topic>Utilization</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Mu, Yan</creatorcontrib><creatorcontrib>Zhuang, Yun</creatorcontrib><creatorcontrib>Sampurno, Yasa</creatorcontrib><creatorcontrib>Wei, Xiaomin</creatorcontrib><creatorcontrib>Ashizawa, Toranosuke</creatorcontrib><creatorcontrib>Morishima, Hiroyuki</creatorcontrib><creatorcontrib>Philipossian, Ara</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Microelectronic engineering</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Mu, Yan</au><au>Zhuang, Yun</au><au>Sampurno, Yasa</au><au>Wei, Xiaomin</au><au>Ashizawa, Toranosuke</au><au>Morishima, Hiroyuki</au><au>Philipossian, Ara</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of pad groove width on slurry mean residence time and slurry utilization efficiency in CMP</atitle><jtitle>Microelectronic engineering</jtitle><date>2016-05-01</date><risdate>2016</risdate><volume>157</volume><spage>60</spage><epage>63</epage><pages>60-63</pages><issn>0167-9317</issn><eissn>1873-5568</eissn><abstract>This paper studies the effect of pad groove width on slurry mean residence time (MRT) in the pad–wafer interface as well as slurry utilization efficiency (η) during chemical mechanical planarization. Three concentrically grooved pads with different groove widths were tested at different polishing pressures to experimentally determine the corresponding MRT using the residence time distribution (RTD) technique. Results showed that MRT and η increased significantly when the groove width increased from 300 to 600μm. On the other hand, when the groove width increased further to 900μm, MRT continued to increase while η remained constant. Results also indicated that MRT was reduced at a higher polishing pressure while η did not change significantly with pressure for all three pads.
[Display omitted]
•Residence time distribution method was applied to calculate mean residence time.•Mean residence time increases with the increasing of pad groove width.•Slurry utilization efficiency level off with the increasing of pad groove width.</abstract><pub>Elsevier B.V</pub><doi>10.1016/j.mee.2016.02.035</doi><tpages>4</tpages><orcidid>https://orcid.org/0000-0002-2273-6196</orcidid></addata></record> |
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source | Access via ScienceDirect (Elsevier) |
subjects | Chemical mechanical planarization Constants Grooves Mean residence time Microelectronics Planarization Polishing Residence time distribution Slurries Slurry utilization efficiency Utilization |
title | Effect of pad groove width on slurry mean residence time and slurry utilization efficiency in CMP |
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