Characterisation of the barrier formation process of self-forming barriers with CuMn, CuTi and CuZr alloys
In this work three elements were investigated as Cu alloys for the self-forming barrier approach: Mn, Ti and Zr. Firstly pure alloy films were prepared in the concentration range from 3 to 9at.%. The thin films were analysed with four point probe, X-ray photoelectron spectroscopy (XPS), X-ray diffra...
Gespeichert in:
Veröffentlicht in: | Microelectronic engineering 2016-04, Vol.156, p.65-69 |
---|---|
Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Schreiben Sie den ersten Kommentar!