Characterisation of the barrier formation process of self-forming barriers with CuMn, CuTi and CuZr alloys

In this work three elements were investigated as Cu alloys for the self-forming barrier approach: Mn, Ti and Zr. Firstly pure alloy films were prepared in the concentration range from 3 to 9at.%. The thin films were analysed with four point probe, X-ray photoelectron spectroscopy (XPS), X-ray diffra...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Microelectronic engineering 2016-04, Vol.156, p.65-69
Hauptverfasser: Franz, Mathias, Ecke, Ramona, Kaufmann, Christian, Kriz, Jakob, Schulz, Stefan E.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!