Growth mode of nitride semiconductors on nano-patterned sapphire substrates by molecular beam epitaxy

In this paper we report on the growth mode by plasmaassisted MBE of nitride films on nano‐patterned sapphire substrates. Such substrates were fabricated using nano‐sphere and nano‐imprint lithographies, which led to cone‐and cylinder‐shaped patterns respectively. The data indicate that the pillars o...

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Veröffentlicht in:	Physica status solidi. C 2016-05, Vol.13 (5-6), p.195-199
Hauptverfasser:	Song, Bowen, Sun, Haiding, Kao, Chen-Kai, Moustakas, Theodore D.
Format:	Artikel
Sprache:	eng
Schlagworte:	Cylinders III-nitrides MBE growth mode of nitrides Molecular beam epitaxy nano-patterned sapphire Nanostructure Nitrides Sapphire Semiconductors Substrates Threading dislocations
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