Statistical Modeling of Gate Capacitance Variations Induced by Random Dopants in Nanometer MOSFETs Reserving Correlations

We consider intrinsic gate capacitance variations due to random dopants in the nanometer metal oxide semi- conductor field effect transistor （MOSFET） channel. The variations of total gate capacitance and gate transcapacitances are investigated and the strong correlations between the trans-capacitanc...

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