3D photodetecting structure with adjustable sensitivity ratio in UV–VIS range
A 3D-photodetecting structure with adjustable sensitivity ratio in the ultra violet (UV) to visible (VIS) range is presented. The device is aimed for spectroscopic sensor applications. It consists of two photodiodes, silicon (Si), and silicon carbide (SiC), and an electronic circuit with switchable...
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Veröffentlicht in: | Microelectronic engineering 2016-03, Vol.154, p.48-52 |
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creator | Kociubiński, Andrzej Borecki, Michał Duk, Mariusz Sochacki, Mariusz Korwin-Pawlowski, Michael L. |
description | A 3D-photodetecting structure with adjustable sensitivity ratio in the ultra violet (UV) to visible (VIS) range is presented. The device is aimed for spectroscopic sensor applications. It consists of two photodiodes, silicon (Si), and silicon carbide (SiC), and an electronic circuit with switchable gains. The SiC photodiode is mounted in the centre of the Si photodiode. The SiC photodiode electronic channel can be used to adjust the sensitivity in the UV range, while the Si photodiode channel can be used for near UV and VIS sensitivity adjustment. Optical properties of the 3D-photodetecting structure are characterized using a deuterium broadband source and a halogen source and light emitted diodes at selected wavelengths. The proposed construction is similar to a matrix of independent UV and VIS detectors mounted on a common base, but the proposed integration method reduces the number of photodiodes and accompanying electronic circuits to minimum, which is an advantage especially when fibre optic applications are considered.
[Display omitted]
•3D structure consists of Si and SiC photodiodes, and an electronic circuit.•3D photodetecting structure is axially symmetrical.•The analysis of optical power of beam is possible with only two photodetectors.•The electronic circuits consist of two transimpedance channels and a summing amplifier.•Construction made enables adjustment of sensitivity ratio in UV–VIS range. |
doi_str_mv | 10.1016/j.mee.2016.01.041 |
format | Article |
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[Display omitted]
•3D structure consists of Si and SiC photodiodes, and an electronic circuit.•3D photodetecting structure is axially symmetrical.•The analysis of optical power of beam is possible with only two photodetectors.•The electronic circuits consist of two transimpedance channels and a summing amplifier.•Construction made enables adjustment of sensitivity ratio in UV–VIS range.</description><identifier>ISSN: 0167-9317</identifier><identifier>EISSN: 1873-5568</identifier><identifier>DOI: 10.1016/j.mee.2016.01.041</identifier><language>eng</language><publisher>Elsevier B.V</publisher><subject>Adjustable ; Channels ; Dual-band detector ; Electric circuits ; Fiber optics ; Optical fibers ; Optoelectronic sensors ; Photodetectors ; Photodiodes ; Silicon ; Silicon carbide ; Silicon carbide photodiode</subject><ispartof>Microelectronic engineering, 2016-03, Vol.154, p.48-52</ispartof><rights>2016 Elsevier B.V.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c330t-185413e85732b8eb80a4463bda963217b4e60412893763fb317eaf71165dcc993</citedby><cites>FETCH-LOGICAL-c330t-185413e85732b8eb80a4463bda963217b4e60412893763fb317eaf71165dcc993</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.mee.2016.01.041$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3541,27915,27916,45986</link.rule.ids></links><search><creatorcontrib>Kociubiński, Andrzej</creatorcontrib><creatorcontrib>Borecki, Michał</creatorcontrib><creatorcontrib>Duk, Mariusz</creatorcontrib><creatorcontrib>Sochacki, Mariusz</creatorcontrib><creatorcontrib>Korwin-Pawlowski, Michael L.</creatorcontrib><title>3D photodetecting structure with adjustable sensitivity ratio in UV–VIS range</title><title>Microelectronic engineering</title><description>A 3D-photodetecting structure with adjustable sensitivity ratio in the ultra violet (UV) to visible (VIS) range is presented. The device is aimed for spectroscopic sensor applications. It consists of two photodiodes, silicon (Si), and silicon carbide (SiC), and an electronic circuit with switchable gains. The SiC photodiode is mounted in the centre of the Si photodiode. The SiC photodiode electronic channel can be used to adjust the sensitivity in the UV range, while the Si photodiode channel can be used for near UV and VIS sensitivity adjustment. Optical properties of the 3D-photodetecting structure are characterized using a deuterium broadband source and a halogen source and light emitted diodes at selected wavelengths. The proposed construction is similar to a matrix of independent UV and VIS detectors mounted on a common base, but the proposed integration method reduces the number of photodiodes and accompanying electronic circuits to minimum, which is an advantage especially when fibre optic applications are considered.
[Display omitted]
•3D structure consists of Si and SiC photodiodes, and an electronic circuit.•3D photodetecting structure is axially symmetrical.•The analysis of optical power of beam is possible with only two photodetectors.•The electronic circuits consist of two transimpedance channels and a summing amplifier.•Construction made enables adjustment of sensitivity ratio in UV–VIS range.</description><subject>Adjustable</subject><subject>Channels</subject><subject>Dual-band detector</subject><subject>Electric circuits</subject><subject>Fiber optics</subject><subject>Optical fibers</subject><subject>Optoelectronic sensors</subject><subject>Photodetectors</subject><subject>Photodiodes</subject><subject>Silicon</subject><subject>Silicon carbide</subject><subject>Silicon carbide photodiode</subject><issn>0167-9317</issn><issn>1873-5568</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNp9UMtOwzAQtBBIlMIHcMuRS4I3dhJHnFB5VarUA7RXy3E2raM2KbZT1Bv_wB_yJRiVM6d9zezuDCHXQBOgkN-2yRYxSUOaUEgohxMyAlGwOMtycUpGYVDEJYPinFw419JQcypGZM4eot26932NHrU33Spy3g7aDxajD-PXkarbwXlVbTBy2Dnjzd74Q2SVN31kumix_P78Wk5fQ6db4SU5a9TG4dVfHJPF0-Pb5CWezZ-nk_tZrBmjPgaRcWAosoKllcBKUMV5zqpalTlLoag45kFEKkpW5KypwuOomgIgz2qty5KNyc1x78727wM6L7fGadxsVIf94CSINOM8SBQBCkeotr1zFhu5s2ar7EEClb_myVYG8-SveZKCDHcD5-7IwaBhb9BKpw12Gmtjg02y7s0_7B96Cnda</recordid><startdate>20160325</startdate><enddate>20160325</enddate><creator>Kociubiński, Andrzej</creator><creator>Borecki, Michał</creator><creator>Duk, Mariusz</creator><creator>Sochacki, Mariusz</creator><creator>Korwin-Pawlowski, Michael L.</creator><general>Elsevier B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20160325</creationdate><title>3D photodetecting structure with adjustable sensitivity ratio in UV–VIS range</title><author>Kociubiński, Andrzej ; Borecki, Michał ; Duk, Mariusz ; Sochacki, Mariusz ; Korwin-Pawlowski, Michael L.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c330t-185413e85732b8eb80a4463bda963217b4e60412893763fb317eaf71165dcc993</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>Adjustable</topic><topic>Channels</topic><topic>Dual-band detector</topic><topic>Electric circuits</topic><topic>Fiber optics</topic><topic>Optical fibers</topic><topic>Optoelectronic sensors</topic><topic>Photodetectors</topic><topic>Photodiodes</topic><topic>Silicon</topic><topic>Silicon carbide</topic><topic>Silicon carbide photodiode</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kociubiński, Andrzej</creatorcontrib><creatorcontrib>Borecki, Michał</creatorcontrib><creatorcontrib>Duk, Mariusz</creatorcontrib><creatorcontrib>Sochacki, Mariusz</creatorcontrib><creatorcontrib>Korwin-Pawlowski, Michael L.</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Microelectronic engineering</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kociubiński, Andrzej</au><au>Borecki, Michał</au><au>Duk, Mariusz</au><au>Sochacki, Mariusz</au><au>Korwin-Pawlowski, Michael L.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>3D photodetecting structure with adjustable sensitivity ratio in UV–VIS range</atitle><jtitle>Microelectronic engineering</jtitle><date>2016-03-25</date><risdate>2016</risdate><volume>154</volume><spage>48</spage><epage>52</epage><pages>48-52</pages><issn>0167-9317</issn><eissn>1873-5568</eissn><abstract>A 3D-photodetecting structure with adjustable sensitivity ratio in the ultra violet (UV) to visible (VIS) range is presented. The device is aimed for spectroscopic sensor applications. It consists of two photodiodes, silicon (Si), and silicon carbide (SiC), and an electronic circuit with switchable gains. The SiC photodiode is mounted in the centre of the Si photodiode. The SiC photodiode electronic channel can be used to adjust the sensitivity in the UV range, while the Si photodiode channel can be used for near UV and VIS sensitivity adjustment. Optical properties of the 3D-photodetecting structure are characterized using a deuterium broadband source and a halogen source and light emitted diodes at selected wavelengths. The proposed construction is similar to a matrix of independent UV and VIS detectors mounted on a common base, but the proposed integration method reduces the number of photodiodes and accompanying electronic circuits to minimum, which is an advantage especially when fibre optic applications are considered.
[Display omitted]
•3D structure consists of Si and SiC photodiodes, and an electronic circuit.•3D photodetecting structure is axially symmetrical.•The analysis of optical power of beam is possible with only two photodetectors.•The electronic circuits consist of two transimpedance channels and a summing amplifier.•Construction made enables adjustment of sensitivity ratio in UV–VIS range.</abstract><pub>Elsevier B.V</pub><doi>10.1016/j.mee.2016.01.041</doi><tpages>5</tpages></addata></record> |
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source | ScienceDirect Journals (5 years ago - present) |
subjects | Adjustable Channels Dual-band detector Electric circuits Fiber optics Optical fibers Optoelectronic sensors Photodetectors Photodiodes Silicon Silicon carbide Silicon carbide photodiode |
title | 3D photodetecting structure with adjustable sensitivity ratio in UV–VIS range |
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