Synthesis and Optical Properties of InP Semiconductor Nanocombs

Synthesis and Optical Properties of InP Semiconductor Nanocombs

InP semiconductor nanocombs are successfully synthesized by the chemical vapor deposition method. The detailed morphology and crystalline structures of the products are characterized by x-ray diffraction, transmission electron microscopy and high resolution transmission electron microscopy. The opti...

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Veröffentlicht in:Chinese physics letters 2014-12, Vol.31 (12), p.128103-128101
Hauptverfasser: Yu, Yan-Long, Zhao, Yi-Song, Gao, Fa-Ming
Format: Artikel
Sprache:eng
Schlagworte:
Crystal structure
Diffraction
Indium phosphides
Nanostructure
Optical properties
Semiconductors
Spectra
Transmission electron microscopy
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Zusammenfassung:InP semiconductor nanocombs are successfully synthesized by the chemical vapor deposition method. The detailed morphology and crystalline structures of the products are characterized by x-ray diffraction, transmission electron microscopy and high resolution transmission electron microscopy. The optical properties of InP nanocombs, including Raman and photoluminescence spectra, are studied. The possible growth mechanism of InP nanocombs is briefly discussed.
ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/31/12/128103