N-Doped Zigzag Graphene Nanoribbons on Si(001): a First-Principles Calculation
The structural and electronic properties of N-doped zigzag graphene nanoribbons (N-ZGNRs) adsorbed on Si(001) substrates are investigated with first-principles density functional calculations. Compared with the free-standing N-ZGNRs, the energy difference between the substitutional doping at the edg...
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Veröffentlicht in: | Chinese physics letters 2015-07, Vol.32 (7), p.77102-1-077102-4 |
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description | The structural and electronic properties of N-doped zigzag graphene nanoribbons (N-ZGNRs) adsorbed on Si(001) substrates are investigated with first-principles density functional calculations. Compared with the free-standing N-ZGNRs, the energy difference between the substitutional doping at the edge and the inner sites is significantly decreased on the Si substrate. The distribution of the extra charge induced by the N substitutional dopant keeps the Friedel oscillation feature, and is a main effect that influences the CSi bonding strength. When N is doped in regions with high CSi bond densities, the strain induced by the dopant also plays an important role in determining the CSi bonding interactions. Similar to the undoped case, the strong N-ZGNR/Si interaction destroys the antiferromagnetic coupling of the edge states in N-ZGNR, leading to a non-magnetic ground state for the N-ZGNR/Si heterostructures. |
doi_str_mv | 10.1088/0256-307X/32/7/077102 |
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Compared with the free-standing N-ZGNRs, the energy difference between the substitutional doping at the edge and the inner sites is significantly decreased on the Si substrate. The distribution of the extra charge induced by the N substitutional dopant keeps the Friedel oscillation feature, and is a main effect that influences the CSi bonding strength. When N is doped in regions with high CSi bond densities, the strain induced by the dopant also plays an important role in determining the CSi bonding interactions. Similar to the undoped case, the strong N-ZGNR/Si interaction destroys the antiferromagnetic coupling of the edge states in N-ZGNR, leading to a non-magnetic ground state for the N-ZGNR/Si heterostructures.</description><identifier>ISSN: 0256-307X</identifier><identifier>EISSN: 1741-3540</identifier><identifier>DOI: 10.1088/0256-307X/32/7/077102</identifier><language>eng</language><subject>Bonding ; Coupling ; Density ; Dopants ; Graphene ; Mathematical analysis ; Nanostructure ; Silicon</subject><ispartof>Chinese physics letters, 2015-07, Vol.32 (7), p.77102-1-077102-4</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c286t-c60e055ba64e1b9c7abc9422a21d9c5611f78fcfdd2d1356a1cc7831d34aa2053</citedby><cites>FETCH-LOGICAL-c286t-c60e055ba64e1b9c7abc9422a21d9c5611f78fcfdd2d1356a1cc7831d34aa2053</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Li, Jing</creatorcontrib><creatorcontrib>Yang, Shen-Yuan</creatorcontrib><creatorcontrib>Li, Shu-Shen</creatorcontrib><title>N-Doped Zigzag Graphene Nanoribbons on Si(001): a First-Principles Calculation</title><title>Chinese physics letters</title><description>The structural and electronic properties of N-doped zigzag graphene nanoribbons (N-ZGNRs) adsorbed on Si(001) substrates are investigated with first-principles density functional calculations. Compared with the free-standing N-ZGNRs, the energy difference between the substitutional doping at the edge and the inner sites is significantly decreased on the Si substrate. The distribution of the extra charge induced by the N substitutional dopant keeps the Friedel oscillation feature, and is a main effect that influences the CSi bonding strength. When N is doped in regions with high CSi bond densities, the strain induced by the dopant also plays an important role in determining the CSi bonding interactions. Similar to the undoped case, the strong N-ZGNR/Si interaction destroys the antiferromagnetic coupling of the edge states in N-ZGNR, leading to a non-magnetic ground state for the N-ZGNR/Si heterostructures.</description><subject>Bonding</subject><subject>Coupling</subject><subject>Density</subject><subject>Dopants</subject><subject>Graphene</subject><subject>Mathematical analysis</subject><subject>Nanostructure</subject><subject>Silicon</subject><issn>0256-307X</issn><issn>1741-3540</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNo90MFLwzAUx_EgCs7pnyDkOA-1eUnTZN5kuimMKaggXsJrms5IbWrSHfSvd2Pi6V2-73f4EHIO7BKY1jnjsswEU6-54LnKmVLA-AEZgSogE7Jgh2T03xyTk5Q-GAPQACOyWmU3oXc1ffPrH1zTRcT-3XWOrrAL0VdV6BINHX3yk-3PxRVFOvcxDdlj9J31fesSnWFrNy0OPnSn5KjBNrmzvzsmL_Pb59ldtnxY3M-ul5nluhwyWzLHpKywLBxUU6uwstOCc-RQT60sARqlG9vUNa9ByBLBWqUF1KJA5EyKMZnsd_sYvjYuDebTJ-vaFjsXNsmA5rIoQGm2TeU-tTGkFF1j-ug_MX4bYGbnZ3Y2ZmdjBDfK7P3ELzLBYfk</recordid><startdate>201507</startdate><enddate>201507</enddate><creator>Li, Jing</creator><creator>Yang, Shen-Yuan</creator><creator>Li, Shu-Shen</creator><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>201507</creationdate><title>N-Doped Zigzag Graphene Nanoribbons on Si(001): a First-Principles Calculation</title><author>Li, Jing ; Yang, Shen-Yuan ; Li, Shu-Shen</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c286t-c60e055ba64e1b9c7abc9422a21d9c5611f78fcfdd2d1356a1cc7831d34aa2053</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Bonding</topic><topic>Coupling</topic><topic>Density</topic><topic>Dopants</topic><topic>Graphene</topic><topic>Mathematical analysis</topic><topic>Nanostructure</topic><topic>Silicon</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Li, Jing</creatorcontrib><creatorcontrib>Yang, Shen-Yuan</creatorcontrib><creatorcontrib>Li, Shu-Shen</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Chinese physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Li, Jing</au><au>Yang, Shen-Yuan</au><au>Li, Shu-Shen</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>N-Doped Zigzag Graphene Nanoribbons on Si(001): a First-Principles Calculation</atitle><jtitle>Chinese physics letters</jtitle><date>2015-07</date><risdate>2015</risdate><volume>32</volume><issue>7</issue><spage>77102</spage><epage>1-077102-4</epage><pages>77102-1-077102-4</pages><issn>0256-307X</issn><eissn>1741-3540</eissn><abstract>The structural and electronic properties of N-doped zigzag graphene nanoribbons (N-ZGNRs) adsorbed on Si(001) substrates are investigated with first-principles density functional calculations. Compared with the free-standing N-ZGNRs, the energy difference between the substitutional doping at the edge and the inner sites is significantly decreased on the Si substrate. The distribution of the extra charge induced by the N substitutional dopant keeps the Friedel oscillation feature, and is a main effect that influences the CSi bonding strength. When N is doped in regions with high CSi bond densities, the strain induced by the dopant also plays an important role in determining the CSi bonding interactions. Similar to the undoped case, the strong N-ZGNR/Si interaction destroys the antiferromagnetic coupling of the edge states in N-ZGNR, leading to a non-magnetic ground state for the N-ZGNR/Si heterostructures.</abstract><doi>10.1088/0256-307X/32/7/077102</doi></addata></record> |
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subjects | Bonding Coupling Density Dopants Graphene Mathematical analysis Nanostructure Silicon |
title | N-Doped Zigzag Graphene Nanoribbons on Si(001): a First-Principles Calculation |
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