The Impact of Shallow-Trench-Isolation Mechanical Stress on the Hysteresis Effect of Partially Depleted Silicon-on-Insulator n-Type Metal-Oxide-Semiconductor Field Effects
The impact of shallow trench isolation (STI) mechanical stress on the hysteresis effect in the output characteristics is measured in partially depleted (PD) silicon-on-insulator (SOI) metal-oxide-semiconductor field effect transistors (MOSFETs). We develop I sub(D) hysteresis, which is defined as th...
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| Veröffentlicht in: | Chinese physics letters 2014-12, Vol.31 (12), p.126601-126601 |
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| container_title | Chinese physics letters |
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| creator | Luo, Jie-Xin Chen, Jing Chai, Zhan Lü, Kai He, Wei-Wei Yang, Yan Wang, Xi |
| description | The impact of shallow trench isolation (STI) mechanical stress on the hysteresis effect in the output characteristics is measured in partially depleted (PD) silicon-on-insulator (SOI) metal-oxide-semiconductor field effect transistors (MOSFETs). We develop I sub(D) hysteresis, which is defined as the difference between I sub(D) versus V sub(D) forward sweep and reverse sweep. The fabricated devices show positive and negative peaks in I sub(D) hysteresis. The experimental results show that I sub(D) hysteresis declined as the STI mechanical stress increases. We also elaborate on the impact of STI mechanical stress on the I sub(D) hysteresis of PD SOI n-type MOSFETs. |
| doi_str_mv | 10.1088/0256-307X/31/12/126601 |
| format | Article |
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We develop I sub(D) hysteresis, which is defined as the difference between I sub(D) versus V sub(D) forward sweep and reverse sweep. The fabricated devices show positive and negative peaks in I sub(D) hysteresis. The experimental results show that I sub(D) hysteresis declined as the STI mechanical stress increases. 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| ispartof | Chinese physics letters, 2014-12, Vol.31 (12), p.126601-126601 |
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| language | eng |
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| source | Institute of Physics Journals |
| subjects | Depletion Devices Field effect transistors Hysteresis MOSFETs Semiconductor devices Stresses Trenches |
| title | The Impact of Shallow-Trench-Isolation Mechanical Stress on the Hysteresis Effect of Partially Depleted Silicon-on-Insulator n-Type Metal-Oxide-Semiconductor Field Effects |
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