Electrical characterization of ZnO/4H-SiC n-p heterojunction diode

The structure and electrical properties of zinc oxide (ZnO) thin films fabricated by atomic layer deposition (ALD) as well as electrical properties of ZnO/4H‐SiC n–p heterojunction diodes were investigated. Hall measurements of ZnO films show their n‐type high intrinsic conductivity. Structural char...

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Veröffentlicht in:	Physica status solidi. A, Applications and materials science Applications and materials science, 2016-05, Vol.213 (5), p.1120-1124
Hauptverfasser:	Kwietniewski, Norbert, Masłyk, Monika, Werbowy, Aleksander, Taube, Andrzej, Gierałtowska, Sylwia, Wachnicki, Łukasz, Sochacki, Mariusz
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum Atomic layer deposition Contact resistance Diodes Electrical properties Heterojunctions p-n diodes Photovoltaic cells SiC Volt-ampere characteristics Zinc oxide Zinc oxides ZnO
Online-Zugang:	Volltext
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