The temperature dependence on the electrical properties of dysprosium oxide deposited on n-porous GaAs

This paper describes the electrical and dielectric characteristics for the first time of the high-k Dy2O3 oxide film deposited on the porous GaAs substrate by electron beam deposition under ultra vacuum. Morphological characterization is investigated by atomic force microscopy (AFM). The electrical...

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Veröffentlicht in:	Journal of alloys and compounds 2016-08, Vol.676, p.127-134
Hauptverfasser:	Saghrouni, H., Jomni, S., cherif, A., Belgacem, W., Beji, L.
Format:	Artikel
Sprache:	eng
Schlagworte:	Atomic force microscopy Bias Capacitance Conductance Dielectric loss Electric potential Gallium arsenide High-k dielectric Impedance spectroscopy Metal-oxide-semiconductor Negative capacitance Porous GaAs Temperature and voltage dependence Voltage
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