Direct Imprinting of Porous Silicon via Metal-Assisted Chemical Etching

Conventional lithographical techniques used for bulk semiconductors produce dramatically poor results when used for micro and mesoporous materials such as porous silicon (PS). In this work, for the first time, a high‐throughput, single‐step, direct imprinting process for PS not involving plastic def...

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Veröffentlicht in:	Advanced functional materials 2016-05, Vol.26 (17), p.2929-2939
Hauptverfasser:	Azeredo, Bruno P., Lin, Yu-Wei, Avagyan, Arik, Sivaguru, Mayandi, Hsu, Keng, Ferreira, Placid
Format:	Artikel
Sprache:	eng
Schlagworte:	Channels Chemical etching electrochemistry metal-assisted chemical etching nanoimprint nanomanufacturing Patterning Plastic deformation Polystyrene resins Porous silicon Semiconductors Three dimensional
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