Highly Reliable Bidirectional a-InGaZnO Thin-Film Transistor Gate Driver Circuit for High-Resolution Displays

This paper presents a new bidirectional gate driver circuit that utilizes amorphous indium-gallium-zinc oxide thin-film transistors (TFTs). To ensure the compactness of the display system, bidirectional transmission function is implemented by adjusting the sequence of clock signals without extra con...

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Veröffentlicht in:	IEEE transactions on electron devices 2016-06, Vol.63 (6), p.2405-2411
Hauptverfasser:	Lin, Chih-Lung, Wu, Chia-En, Chen, Fu-Hsing, Lai, Po-Cheng, Cheng, Mao-Hsun
Format:	Artikel
Sprache:	eng
Schlagworte:	Amorphous indium-gallium-zinc oxide thin-film transistor (a-IGZO TFT) Bidirectional bidirectional operation Clocks Displays Driver circuits gate driver Gates (circuits) Integrated circuit reliability Logic gates Oxides Power consumption Semiconductor devices shift register Stress TFTs Thin film transistors
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